Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
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用于动态随机存取存储器电容器的 ZrO2 基介电材料的组合研究
DOI：
10.1143/jjap.50.06gh12
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发表时间：
2011
影响因子：
1.5
通讯作者：
A. Ogura
中科院分区：
文献类型：
--
作者：
Yuji Kiyota;K. Itaka;Y. Iwashita;T. Adachi;T. Chikyow;A. Ogura
我们研究了氧化锆（ZrO 2）基材料库中寻找新的动态随机存取存储器（DRAM）的介电材料的组合脉冲激光沉积（combi-PLD）。我们发现，在ZrO 2体系中，钇（Y）取代Zr位有效地抑制了漏电流。该体系的金属-绝缘体-金属（MIM）电容器性能显示漏电流密度小于5×10-7 A/cm 2，介电常数为20。此外，向该系统中添加钛（Ti）或钽（Ta）导致介电常数在允许的泄漏水平5×10-7 A/cm 2内增加至1.25。因此，Zr-Y-Ti-O和Zr-Y-Ta-O系统具有替代SiO2作为DRAM电容器高介电常数新材料的良好潜力。
We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal–insulator–metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ∼25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr–Y–Ti–O and Zr–Y–Ta–O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).
影响因子：
4
作者：
M. Komatsu;R. Yasuhara;H. Takahashi;S. Toyoda;H. Kumigashira;M. Oshima;D. Kukuruznyak;T. Chikyow
通讯作者：
M. Komatsu;R. Yasuhara;H. Takahashi;S. Toyoda;H. Kumigashira;M. Oshima;D. Kukuruznyak;T. Chikyow