Ultra-Low Power Light Emission via Avalanche and Sub-avalanche Breakdown in Suspended Carbon Nanotubes
Ultra-Low Power Light Emission via Avalanche and Sub-avalanche Breakdown in Suspended Carbon Nanotubes
复制标题
通过悬浮碳纳米管中的雪崩和亚雪崩击穿实现超低功率发光
DOI：
10.1021/acsphotonics.8b00896
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发表时间：
2018
期刊：
影响因子：
7
通讯作者：
S. Cronin
中科院分区：
文献类型：
--
作者：
Bo Wang;Sisi Yang;L. Shen;S. Cronin
我们探讨近红外光发射悬浮碳纳米管场效应晶体管在很宽的范围内的栅极和偏置电压。在高偏压（约3.5V）下观察到电流（90 μA/V）和电致发光强度的突然增加，当门控在“关”状态（即，Vgate > 0V）。对于偏置电压低于阈值的雪崩击穿，我们观察到光发射由于这些高电场下的碰撞电离激子的创建。在这里，我们发现，有一个相对较小的区域，在其上观察到低功率（10 mW）的光发射。通过绘制相对发光效率（即，光强度/电功率）作为栅极和偏置电压的函数，我们观察到对应于雪崩发射的非常尖锐的特征，在该特征下，电致发光效率比在所有其它栅极和偏置电压条件下的电致发光效率高2-3个数量级。电流随偏置电压的急剧增加（即，大口径/...
We explore near-infrared light emission in suspended carbon nanotube field effect transistors over a wide range of gate and bias voltages. An abrupt increase in both the electric current (90 μA/V) and electroluminescence intensity is observed at high bias voltages (∼3.5 V), when gated in the “off’ state (i.e., Vgate > 0 V). For bias voltages below the threshold for avalanche breakdown, we observe light emission due to the creation of exitons by impact ionization under these high electric fields. Here, we find that there is a relatively small region over which low power (∼nW) light emission is observed. By plotting the relative luminescence efficiency (i.e., light intensity/electrical power) as a function of the gate and bias voltages, we observe a very sharp feature corresponding to avalanche emission at which the electroluminescence efficiency is 2–3 orders of magnitude higher than that under all other conditions of gate and bias voltage. A steep increase in the current with bias voltage (i.e., large dI/...
影响因子：
17.1
作者：
Jakubka, Florian;Grimm, Stefan B.;Zaumseil, Jana
通讯作者：
Zaumseil, Jana
影响因子：
35
作者：
Khasminskaya, Svetlana;Pyatkov, Felix;Pernice, Wolfram H. P.
通讯作者：
Pernice, Wolfram H. P.