Segregation and properties at curved vs straight (000) inversion boundaries in piezotronic ZnO bicrystals
Segregation and properties at curved vs straight (000) inversion boundaries in piezotronic ZnO bicrystals
复制标题
压电 ZnO 双晶中弯曲与直 (000) 反转边界的偏析和特性
DOI：
10.1111/jace.16912
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发表时间：
2020
影响因子：
3.9
通讯作者：
H.-J. Kleebe
中科院分区：
文献类型：
--
作者：
M. Trapp;P. Keil;T. Frömling;J. Rödel;H.-J. Kleebe
对 ZnO 双晶界面进行 TEM 和 SEM 研究，旨在研究局部晶界结构、偏析和垂直于界面的电传输的相关性。为此，选择具有压电特性的类压敏电阻 ZnO 双晶，其相对于 c 轴具有 (000)║(000) 尾对尾取向。为了对比具有不同相干性和偏析铋但相同宏观偏振态的不同局部晶界结构，应用了两种互补的处理技术。具有含有 Zn-Bi-Co-O 的中间薄膜的扩散键合双晶提供了直界面作为参考。相比之下，通过外延固态转变制备的 ZnO 双晶是通过将两个 ZnO 单晶与 100 µm 厚的多晶 ZnO 压敏电阻材料结合而成，该材料具有包括铋和钴的典型掺杂剂成分。该结构被退火到形成双晶的程度，压敏电阻浓度在边界处，由于多晶微结构仍然在界面处提供阴影图像，因此双晶强烈弯曲。结果强调了局部界面形态、铋偏析程度和界面上电传输的非线性程度之间的明显相关性。
TEM and SEM investigations of ZnO bicrystal interfaces were undertaken with an aim to study the correlation of local grain‐boundary structure, segregation, and electrical transport perpendicular to the interface. To this end, varistor‐like ZnO bicrystals with piezotronic characteristics were chosen with (000)║(000) tail‐to‐tail orientation with respect to the c‐axis. In order to contrast different local grain‐boundary structures with different coherency and segregation of bismuth, but identical macroscopic polarization state, two complementary processing techniques were applied. A diffusion‐bonded bicrystal with an intermediate thin film containing Zn–Bi–Co–O provided a straight interface as reference. In contrast, a ZnO bicrystal prepared by epitaxial solid‐state transformation was manufactured by bonding two ZnO single crystals with a 100 µm thick polycrystalline ZnO varistor material with a typical dopant composition including bismuth and cobalt. This structure was annealed to the point that a bicrystal was formed with the varistor concentration at the boundary, which was strongly curved due to the polycrystalline microstructure still providing a shadow image at the interface. The results highlight a distinct correlation between local interfacial morphology, degree of segregation of bismuth, and degree of nonlinearity of the electrical transport across the interface.
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