Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single‐nanowire X‐ray diffraction
Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single‐nanowire X‐ray diffraction
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通过单纳米线 X 射线衍射探测在 Si(111) 上生长的 GaAs 纳米线的结构多型性和残余应变
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
U. Pietsch
中科院分区：
文献类型：
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作者：
A. Biermanns;S. Breuer;A. Davydok;L. Geelhaar;U. Pietsch
利用聚焦同步辐射束的高分辨X射线衍射研究了Si（111）衬底上生长的GaAs纳米线的结构组成、相排列和残余应变。据发现，即使相邻的纳米线生长在相同的样品在相同的生长条件下显着不同，在其相结构，其中大多数表现出小纤锌矿段嵌入较大的锌的部分之间。此外，使用结构敏感的布拉格反射，在NW的闪锌矿部分观察到残余应变，这可能是由衬底界面处的不完全弛豫引起的。
The structural composition, phase arrangement and residual strain of individual GaAs nanowires (NWs) grown on Si(111) have been investigated using NW-resolved high-resolution X-ray diffraction employing a focused synchrotron beam. It is found that even neighbouring NWs grown on the same sample under the same growth conditions differ significantly in their phase structure, most of them exhibiting small wurtzite segments embedded between larger zincblende sections. Moreover, using structurally sensitive Bragg reflections, residual strain is observed in the zincblende sections of the NWs, likely caused by an incomplete relaxation at the substrate interface.
影响因子：
3.3
作者：
Favre-Nicolin, V.;Mastropietro, F.;Robinson, I. K.
通讯作者：
Robinson, I. K.