Characterization of a cold cathode Penning ion source for the implantation of noble gases beneath 2D monolayers on metals: Ions and neutrals
Characterization of a cold cathode Penning ion source for the implantation of noble gases beneath 2D monolayers on metals: Ions and neutrals
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用于在金属上 2D 单分子层下方注入惰性气体的冷阴极彭宁离子源的表征：离子和中性离子
DOI：
10.1116/1.4939507
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Greber
中科院分区：
文献类型：
--
作者：
H. Cun;Annina Spescha;A. Schuler;M. Hengsberger;J. Osterwalder;T. Greber
本文报道了商用冷阴极离子源IQP 10/63在不同放电电压（480 ~ 600 V）下的氩离子动能谱。高动能截止取决于放电电压和由于过量正电荷而产生的相应等离子体电势，发现该等离子体电势约为136 V。将铑上的单层六方氮化硼暴露于离子源的射束导致纳米帐篷的形成，即，稳定的原子突起向目标样品施加正偏压以阻挡由离子源产生的正离子。然而，施加高于动能截止值的正偏置电势（800 eV），仍然允许纳米帐篷的形成及其用扫描隧道显微镜观察。这表明离子源还产生动能高于穿过单层六方氮化硼的穿透阈值的中性原子。
Argon ion kinetic energy spectra at different discharge voltages (between 480 and 600 V) of a commercial cold cathode ion source IQP10/63 are reported. The high kinetic energy cut-off depends on the discharge voltage and the corresponding plasma potential due to excess positive charges which is found to be about 136 V. Exposure of single layer hexagonal boron nitride on rhodium to the beam of the ion source leads to the formation of nanotents, i.e., stable atomic protrusions. A positive bias voltage is applied to the target sample to block the positive ions produced by the ion source. However, application of a positive bias potential (800 eV), which is higher than the kinetic energy cut-off, still allows the formation of nanotents and its observation with scanning tunneling microscopy. This indicates that the ion source also produces neutral atoms with kinetic energies higher than the penetration threshold across a single layer of hexagonal boron nitride.
影响因子：
10.8
作者：
Standop, Sebastian;Lehtinen, Ossi;Busse, Carsten
通讯作者：
Busse, Carsten