Characterisation of Pd Schottky barrier on n-type GaN
Characterisation of Pd Schottky barrier on n-type GaN
复制标题
n 型 GaN 上 Pd 肖特基势垒的表征
DOI：
10.1049/el:19960029
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发表时间：
1996
影响因子：
1.1
通讯作者：
I. Adesida
中科院分区：
文献类型：
--
作者：
A. Ping;A. Schmitz;M. Khan;I. Adesida
研究了MOCVD生长n型GaN的Pd - Schottky势垒的电学特性。有效势垒高度分别为0.94 eV和1.07 eV。理想因子为~1.04。利用改进的Norde图确定有效Richardson常数为~3.24 am - 2k -2。这些值也与欧肖特基接触值进行了比较。
The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07 eV from I-V and C-V measurements, respectively. The ideality factor was ~1.04. The effective Richardson constant was determined to be ~3.24 Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M