Phase variation and properties of (Ti, Al)N films prepared by ion beam assisted deposition
Phase variation and properties of (Ti, Al)N films prepared by ion beam assisted deposition
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离子束辅助沉积制备(Ti,Al)N薄膜的相变及性能
DOI：
10.1016/s0257-8972(97)00160-6
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发表时间：
1997
影响因子：
5.4
通讯作者：
H. Mori
中科院分区：
文献类型：
--
作者：
Y. Setsuhara;Tomokazu Suzuki;Y. Makino;S. Miyake;T. Sakata;H. Mori
(Ti采用离子束辅助沉积（IBAD）技术制备了Ti（Al）N薄膜，其中Ti和Al在能量范围为0.2- 20 keV的氮离子同时轰击下气相沉积。利用选区电子衍射技术研究了（Ti，Al）N薄膜的相变化与Al含量的关系。结构分析表明，在Al含量高达67 at.%的薄膜中形成单相NaCl结构。随着Al含量的增加，薄膜呈现出由NaCl和纤锌矿结构相组成的双相混合物。当Al含量大于84 at.%时，观察到该相转变成单相纤锌矿结构。研究了NaCl向纤锌矿结构转变的临界Al含量（67 at.%）Al）与该值（65.3at. Al）理论上使用两个能带参数预测的，即混合函数和差距减小参数。（Ti0.7Al0.3）N薄膜的高温氧化测试在高达10900 °C时没有显示出明显的氧化，而TiN薄膜在低至10700 °C的温度下开始显示出显著的重量增加。
(Ti, Al)N films were prepared using ion beam assisted deposition (IBAD), in which the films were formed by vapour deposition of Ti and Al under simultaneous bombardment with nitrogen ions in the energy range 0.2–20keV. Detailed investigations on the phase variation of (Ti, Al)N films as a function of Al content were carried out using selected area electron diffraction. The structural analysis showed the formation of a single-phase NaCl structure in the films with Al content up to 67at.%. With increasing Al content, the films exhibited a double phase mixture consisting of NaCl and wurtzite structure phases. With Al content above 84at.%, the phase was observed to transform into a single-phase wurtzite structure. The critical Al content for the phase transition from NaCl to wurtzite structure (67at.% Al) was in excellent agreement with the value (65.3at.% Al) theoretically predicted using the two band parameters; i.e. the hybrid function and the gap reduction parameter. High-temperature oxidation tests of the (Ti0.7Al0.3)N film did not show appreciable oxidation up to ∼900°C, whereas the TiN films began to show significant weight gain at temperatures as low as ∼700°C.
离子束辅助沉积 (Ti,Al)N 薄膜的合成与表征
DOI：
--
发表时间：
2003
期刊：
Proc.50^<th> Japan Conf.on Materials and Environments
影响因子：
--
作者：
T.Ueta;S.Hanaki;M.Yamashita;H.Uchida
通讯作者：
H.Uchida