Growth and Structure of Ce(O,F)SbS2 Single Crystals

Growth and Structure of Ce(O,F)SbS2 Single Crystals
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Ce(O,F)SbS2 单晶的生长和结构

DOI:
10.1021/acs.cgd.6b00497
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发表时间:
2016
影响因子:
3.8
通讯作者:
and Isao Tanaka
and Isao Tanaka
中科院分区:
化学2区
文献类型:
--
作者:
Masanori Nagao;Masashi Tanaka;Ryo Matsumoto;Hiromi Tanaka;Satoshi Watauchi;Yoshihiko Takano;and Isao Tanaka

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采用CsCl/KCl助熔剂法制备了Ce(O,F) sbs2单晶。所有获得的晶体都具有板状形状,在发育良好的平面上典型尺寸为1-3毫米。随着晶体中F含量的增加,Ce(O,F) sbs2的轴晶格参数有减小的趋势。单晶x射线结构分析确定ceosbs2的晶体结构为单斜p21 /m,晶格参数为a= 4.031(6) Å,b= 4.034(6) Å,c= 13.06(2) Å, β = 97.461(13)°。化学键价和估算和x射线光电子能谱分析表明,Ce的化学态为Ce3+和Ce4+的混合价态。Ce(O,F) sbs2具有较高的绝缘性能,室温下电阻率大于~ 10 kΩ·cm,在6 K左右发生磁跃迁。用同样的方法也可以生长出具有类似片状形状的R(O,F)SbS2(R = La, Pr, Nd)单晶。
Ce(O,F)SbS2single crystals were successfully grown using a CsCl/KCl flux method. All of the obtained crystals have a plate-like shape with a typical size of 1–3 mm in a well-developed plane. Thec-axis lattice parameter of Ce(O,F)SbS2tends to decrease with an increase of the F-content in the crystals. The crystal structure of CeOSbS2was determined to be monoclinicP21/mwith lattice parameters ofa= 4.031(6) Å,b= 4.034(6) Å,c= 13.06(2) Å, β = 97.461(13)° by single crystal X-ray structural analysis. The bond valence sum estimation and X-ray photoelectron spectroscopy analysis showed that the chemical state of Ce was in the mixed valence of Ce3+and Ce4+. The Ce(O,F)SbS2was insulating with high electrical resistivity more than ∼10 kΩ·cm at room temperature and showed a magnetic transition around 6 K. Single crystals of R(O,F)SbS2(R = La, Pr, Nd) with a similar plate-like shape also could be grown with the same method.
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