Development of N+ in P pixel sensors for a high-luminosity large hadron collider
Development of N+ in P pixel sensors for a high-luminosity large hadron collider
复制标题
高亮度大型强子对撞机N in P像素传感器的开发
DOI：
10.1016/j.nima.2014.05.029
复制
发表时间：
2014
影响因子：
1.4
通讯作者：
Y. Ikegami
中科院分区：
文献类型：
--
作者：
S. Kamada;K. Yamamura;Y. Unno;Y. Ikegami
滨松光子公司K.为高亮度大型强子对撞机（HL-LHC）研制了一种具有高辐射耐受性的平面N+像素传感器。P平面中的N+像素传感器是HL-LHC的候选者，并且与N+平面传感器、三维传感器和金刚石传感器相比，其具有高辐射耐受性和合理价格的优点。然而，p平面像素传感器中的N+仍然存在一些需要解决的问题，例如其边缘纤细以及传感器与读出集成电路之间存在火花的危险。我们现在正试图用晶圆级工艺来解决这些问题，这对大规模生产很重要。到目前为止，我们已经获得了一个250 μm的边缘与施加的偏置电压为1000 V。为了防止来自边缘的高压火花，我们提出了N+边缘的一些可能的设计。
Hamamatsu Photonics K. K. is developing anN+ in applanar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). TheN+ in thepplanar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with theN+in annplanar sensor, the three-dimensional sensor, and the diamond sensor. However, theN+ in thepplanar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for theN+ edge.
3D 有源边缘硅传感器：ATLAS-IBL 生产的设备处理、产量和质量保证
DOI：
10.1016/j.nima.2012.05.070
发表时间：
2013
期刊：
Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
--
作者：
Da Vià C
通讯作者：
Da Vià C