Solid–liquid interface energy of silicon
Solid–liquid interface energy of silicon
复制标题
硅的固液界面能
DOI：
10.1016/j.actamat.2006.03.009
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发表时间：
2006-07
期刊：
影响因子：
9.4
通讯作者：
中科院分区：
文献类型：
--
作者：
通过观察发光界面和生长晶体的形貌，找到了硅以中间方式生长的直接证据，并确定了硅从横向生长到中间生长的临界过冷度ΔT_（max）和从中间生长到连续生长的临界过冷度ΔT_（max）。提出了一种基于临界生长转变过冷度预测固液界面能的方法。由硅的ΔT_∞预测的固液界面能与由ΔT_∞预测的固液界面能吻合得很好。在783- 1683 K温度范围内，由ΔT_（max）和ΔT_（max）预测的固液界面能的百分误差小于0.59%。从硅的临界生长转变过冷度预测的固-液界面能所得到的结果也与从成核法和晶界法所报道的结果一致。它们的百分比误差在0.24- 4.55%之间。
By examining the morphologies of the recalescence interface and the growing crystal, direct evidence for silicon to grow in intermediary mode has been found, and the critical undercooling for silicon from lateral growth to intermediary growth ΔT∗and that from intermediary growth to continuous growth ΔT∗∗have been determined. A method that predicts the solid–liquid interface energy on the basis of the critical growth transition undercooling has been developed. The solid–liquid interface energy predicted from ΔT∗for silicon is in very good agreement with that from ΔT∗∗. The percentage error between the solid and liquid interface energies predicted from ΔT∗and ΔT∗∗is smaller than 0.59% when the temperature is in the range 783–1683K. The results obtained for the solid–liquid interface energy predicted from the critical growth transition undercoolings for silicon are also consistent with the reported results from the nucleation method and the grain boundary method. Their percentage errors are in the range 0.24–4.55%.
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影响因子：
8.6
作者：
Li;Herlach
通讯作者：
Li;Herlach
影响因子：
4.5
作者：
S. Battersby;R. Cochrane;A. Mullis
通讯作者：
S. Battersby;R. Cochrane;A. Mullis
影响因子：
3.2
作者：
TURNBULL, D
通讯作者：
TURNBULL, D
影响因子：
1.6
作者：
J. G. Dash;V. Hodgkin;J. Wettlaufer
通讯作者：
J. G. Dash;V. Hodgkin;J. Wettlaufer
DOI：
10.1016/0001-6160(85)90161-0
发表时间：
1985-01-01
期刊：
ACTA METALLURGICA
影响因子：
--
作者：
GUNDUZ, M;HUNT, JD
通讯作者：
HUNT, JD