Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
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通过中性束氧化对三维结构进行低温、与束流方向相关、与晶格平面无关且无损伤的氧化
DOI：
10.1143/jjap.48.04c007
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发表时间：
2009
影响因子：
1.5
通讯作者：
S. Samukawa
中科院分区：
文献类型：
--
作者：
Masahiro Yonemoto;T. Ikoma;Keisuke Sano;K. Endo;T. Matsukawa;M. Masahara;S. Samukawa
为了制造具有三维（3D）结构的金属氧化物半导体场效应晶体管（MOSFET），传统的热氧化（TO）工艺中出现了一些问题，例如漏电流、形状不均匀性、应力集中以及氧化速率对Si晶面的依赖性。为了克服这些问题，我们提出低温（<300°C）中性束氧化（NBO）作为替代氧化工艺。我们发现，就等效氧化物厚度（EOT）和漏电流之间的关系而言，由NBO生长的氧化物膜（NBO膜）表现出与热氧化物膜一样高的栅极介电膜的性能特征。 NBO 的速率也与 Si 的晶格平面无关，而氧化则取决于束流方向。因此，通过NBO生长氧化膜是有利的，因为该方法可以应用于场效应晶体管（FinFET）和周围栅极晶体管（SGT）的3D鳍结构的栅极介电膜。
To fabricate a metal oxide semiconductor field-effect transistor (MOSFET) with a three-dimensional (3D) structure, several problems arise in the conventional thermal oxidation (TO) process, such as leakage current, shape nonuniformity, stress concentration, and the dependence of the oxidation rate on the lattice plane of Si. To overcome these problems, we propose low-temperature (<300 °C) neutral beam oxidation (NBO) as an alternative oxidation process. We found that an oxide film grown by NBO (NBO film) exhibits performance characteristics of a gate dielectric film that are as high as those of thermal oxide films in terms of the relationship between equivalent oxide thickness (EOT) and leakage current. The rate of NBO is also independent of the lattice plane of Si, while the oxidation is beam orientation dependent. Therefore, growing oxide films by NBO is advantageous, in that the method can be applied to gate dielectric films for the 3D fin structure of field-effect transistors (FinFETs) and surrounding gate transistors (SGTs).
使用中性束蚀刻制造垂直沟道双栅极 MOSFET
DOI：
--
发表时间：
2006
期刊：
Japanese Journal of Applied Physics 45・10
影响因子：
--
作者：
遠藤和彦
通讯作者：
遠藤和彦