Neuronal attachment and outgrowth on a micropatterned fluorinated polyimide surface

Neuronal attachment and outgrowth on a micropatterned fluorinated polyimide surface
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微图案氟化聚酰亚胺表面上的神经元附着和生长

DOI:
10.1007/s10047-004-0255-y
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发表时间:
2004
影响因子:
1.3
通讯作者:
M. Iwaki
M. Iwaki
中科院分区:
工程技术4区
文献类型:
--
作者:
H. Kawakami;Kazue Hiraka;S. Nagaoka;Yoshiaki Suzuki;M. Iwaki

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在这项研究中,我们研究了粘附和神经细胞的神经突起生长的氟化聚酰亚胺膜微图案的离子辐照。我们使用氟化聚酰亚胺,因为它的生物相容性和优异的热性能和机械性能的离子辐照。体外研究采用褐家鼠嗜铬细胞(PC 12)。用He+、Ne+或Kr+离子在50 keV下以1013至1015离子/cm 2的能量密度范围照射聚酰亚胺膜。PC 12细胞选择性地粘附到通过离子照射微图案化的聚酰亚胺膜上。在Kr+照射的膜上生长的PC 12细胞的总神经突长度最长;在Kr+照射9天后的膜上的神经突长度是在He+照射的膜上生长的细胞的神经突长度的大约5倍,即,135 µm。此外,在不同辐照剂量的聚酰亚胺膜上培养的PC 12细胞分化率与其神经突起总长度的变化趋势相似,分化率的大小顺序为Kr+ > Ne+ > He+。这项初步研究表明,增强神经突起的生长和分化的PC 12细胞上的氟化聚酰亚胺膜微图案的离子辐照。
In this study, we investigated the adhesion and neurite outgrowth of nerve cells on a fluorinated polyimide film micropatterned by ion irradiation. We used fluorinated polyimide because of its biocompatibility and excellent thermal and mechanical properties for ion irradiation. Rattus norvegicus chromaffin (PC12) cells were used for in vitro studies. The polyimide films were irradiated with He+, Ne+, or Kr+ ions in a fluence range from 1013 to 1015 ions/cm2 at 50 keV. PC12 cells selectively adhered to the polyimide film micropatterned by ion irradiation. The total neurite length for PC12 cells grown on the Kr+-irradiated film was the longest; the neurite length on the film irradiated by Kr+ after 9 days was approximately five times longer than that for cells grown on the He+-irradiated film, i.e., 135 µm. In addition, the PC12 differentiation rate on the ion-irradiated polyimide films also showed a similar trend to the total neurite length for PC12 cells cultured on the films: the rate decreased in the order Kr+ > Ne+ > He+. This initial study indicated enhanced neurite outgrowth and differentiation of PC12 cells on fluorinated polyimide film micropatterned by ion irradiation.
DOI: 10.1016/s0142-9612(00)00352-5
发表时间: 2001-05-01
期刊: BIOMATERIALS
影响因子: 14
作者:
Kam, L;Shain, W;Bizios, R
通讯作者: Bizios, R