Observations of orientation dependence of surface morphology in tungsten implanted by low energy and high flux D plasma
Observations of orientation dependence of surface morphology in tungsten implanted by low energy and high flux D plasma
复制标题
低能高通量D等离子体注入钨表面形貌取向依赖性的观察
DOI:
10.1016/j.jnucmat.2013.07.062
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发表时间:
2013-11
影响因子:
3.1
通讯作者:
X. Huang
中科院分区:
文献类型:
--
作者:
H.Y. Xu;Y.B. Zhang;Y. Yuan;B.Q. Fu;A. Godfrey;G. De Temmerman;刘伟;X. Huang
Surface modification by formation of blistering and nanostructures with pronounced orientation dependence has been observed on surfaces of rolled tungsten and recrystallized tungsten after exposure to a low energy (38 eV) deuterium (D) plasma with a high flux of 1024m−2s−1. The correlation between blisters and nanostructures with grain orientation was examined on recrystallized tungsten to exclude the influence of defects introduced during plastic deformation on the pattern of surface modification. The amount of blistering changed from the most in grains oriented close to <1 1 1> to the least in grains oriented close to <0 0 1>. Three kinds of typical nanostructures were observed, with a clear dependence on grain orientation. Triangular structures were observed on grains oriented near the <1 1 1> corner of the inverse pole figure, with lamellar structures formed for grains oriented near the <0 1 1> corner, and spongy structures for grains near the <0 0 1> corner. Possible reasons for the orientation dependence of both the blisters and nanostructures are discussed.
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影响因子:
3.1
作者:
J. Condon;T. Schober
通讯作者:
J. Condon;T. Schober
影响因子:
2.9
作者:
S. Lindig;M. Balden;V. Alimov;T. Yamanishi;W. Shu;J. Roth
通讯作者:
S. Lindig;M. Balden;V. Alimov;T. Yamanishi;W. Shu;J. Roth
影响因子:
3.3
作者:
G. D. Temmerman;J. Zielinski;van S Diepen;Laurent Marot;M. Price
通讯作者:
G. D. Temmerman;J. Zielinski;van S Diepen;Laurent Marot;M. Price
影响因子:
3.1
作者:
M. Ye;H. Kanehara;S. Fukuta;N. Ohno;S. Takamura
通讯作者:
M. Ye;H. Kanehara;S. Fukuta;N. Ohno;S. Takamura
影响因子:
3.3
作者:
Shu, W. M.;Wakai, E.;Yamanishi, T.
通讯作者:
Yamanishi, T.