Effect of secondary phase on the electromagnetic shielding effectiveness of magnesium alloy.

Effect of secondary phase on the electromagnetic shielding effectiveness of magnesium alloy.
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第二相对镁合金电磁屏蔽效能的影响

DOI:
10.1038/s41598-018-19933-7
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发表时间:
2018-01-26
期刊:
影响因子:
4.6
通讯作者:
Zhao D
Zhao D
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Gao S;Chen X;Pan F;Song K;Zhao C;Liu L;Liu X;Zhao D

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为了解第二相取向对镁合金电磁屏蔽性能的影响,系统研究了不同轧制和热处理条件下制备的Mg-xZn和Mg-xSn(x = 3,5)合金的显微组织、电导率和电磁屏蔽效能。通过对合金进行轧制形成基体织构,然后进行不同时间的固溶处理和时效处理,诱导第二相粒子沿特定方向沿着析出。实验结果表明,在Mg-Zn和Mg-Sn合金中,第二相分别沿着垂直于基面和平行于基面的方向析出。当电磁波入射方向垂直于基面时,Mg-Sn合金中平行于基面的析出物提高了SE。SE的增加主要归因于入射电磁波的反射和多次反射损耗的改善,这是由具有特定取向的沉淀物的量的增加引起的。Mg-5Sn合金经480 °C固溶处理16 h和170 °C × 60 h人工时效60 h后,在1200 MHz处的最大值为107-89 dB,最大SE增量为13 dB。
The microstructure, electrical conductivity, and electromagnetic interference (EMI) shielding effectiveness (SE) of Mg-xZn and Mg-xSn (x = 3,5) alloys prepared under different rolling and heat treatment conditions were systematically investigated to understand the effect of secondary-phase orientation on the electromagnetic-shielding property of magnesium alloys. Alloys were rolled to form basal textures and then subjected to different durations of solid-solution treatment and aging to induce the precipitation of secondary-phase particles along a specific direction. Experimental results indicated that in Mg-Zn and Mg-Sn alloys, secondary phases precipitated along directions perpendicular and parallel to the basal plane, respectively. When the direction of the incident electromagnetic wave is perpendicular to the basal plane, precipitates in Mg-Sn alloy parallel to the basal plane improve SE. The increment in SE is mainly attributed to the improvement in the reflection and multiple reflection losses of incident electromagnetic waves, which are caused by increasing the amounts of precipitates with specific orientations. Mg-5Sn alloy subjected to 16 h of solution treatment at 480 °C and 60 h of artificial aging at 170 °C for 60 h exhibited the maximum value of 107–89 dB and maximum increment in SE of 13 dB at 1200 MHz.
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