The influence of filament temperature and oxygen concentration on tungsten oxide nanostructures by hot filament metal oxide deposition
The influence of filament temperature and oxygen concentration on tungsten oxide nanostructures by hot filament metal oxide deposition
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灯丝温度和氧浓度对热丝金属氧化物沉积氧化钨纳米结构的影响
DOI:
10.1088/0022-3727/41/15/155410
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发表时间:
2008-08
影响因子:
3.4
通讯作者:
Ye, B.J.
中科院分区:
文献类型:
--
作者:
Lou, J.;Wang, Z.B.;Wang, X.P.;Weng, H.M.;Du, H.J.;Ye, B.J.
Tungsten oxide (WOx) nanostructures were prepared by a hot filament chemical vapour deposition system and the temperature of the hot tungsten filaments was changed by steps of degrees. The morphology and average growth rate were indicated by scanning electron microscopy which showed that the morphology was highly related to the filament temperature (Tf) and the distance between the filaments and the polished Si (1 0 0) substrates (df). The influence of Tf on the crystalline nature was studied by x-ray diffraction and Raman spectroscopy. The evolution of stoichiometry and types of defects was indicated by x-ray photoelectron spectroscopy and slow positron implantation spectroscopy. When Tf was up to 1750 °C, tungsten oxide nanostructure was synthesized. A turning point of Tf was found at which the nature of crystallinity and of stoichiometry was the best. As Tf increased to 2100 °C or df decreased, the film crystallinity decreased; correspondingly, the component ratio of stoichiometry WO3 decreased and lots of vacancy agglomerates were present. In order to develop the chemical phase from substoichiometry to stoichiometry, the oxygen gas concentration in the mixture gas during deposition should be raised to an appropriate level.
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影响因子:
3
作者:
Shankar, N;Yu, MF;Glumac, NG
通讯作者:
Glumac, NG
影响因子:
2.5
作者:
A. Yu;N. Kumagai;Zhaolin Liu;J. Lee
通讯作者:
A. Yu;N. Kumagai;Zhaolin Liu;J. Lee
影响因子:
4
作者:
S. Yoo;J. Lim;Y. Sung;Y. Jung;H. Choi;D. K. Kim
通讯作者:
S. Yoo;J. Lim;Y. Sung;Y. Jung;H. Choi;D. K. Kim
影响因子:
29.4
作者:
Zhou, J;Xu, NS;Wang, ZL
通讯作者:
Wang, ZL
影响因子:
3.5
作者:
Chao-Hsuing Chen;Shui-Jinn Wang;R. Ko;Y. Kuo;K. Uang;Tron-min Chen;B. Liou;H. Tsai
通讯作者:
Chao-Hsuing Chen;Shui-Jinn Wang;R. Ko;Y. Kuo;K. Uang;Tron-min Chen;B. Liou;H. Tsai