Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy
Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy
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Si (111) 衬底作为高效假掩模，用于通过氨分子束外延选择性生长 GaN 材料和器件
DOI：
10.1063/1.2199457
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发表时间：
2006
影响因子：
4
通讯作者：
J. Bardwell
中科院分区：
文献类型：
--
作者：
H. Tang;S. Haffouz;J. Bardwell
报道了Si(111)作为氨分子束外延选择性生长GaN的有效伪掩模衬底的独特性质。GaN在Si(111)表面的临界成核温度低至700℃，远低于蓝宝石或AlN表面的临界成核温度。因此，使用图案化的AlN缓冲层在Si(111)衬底上通过氨分子束外延选择性地生长GaN是可能的。可用于选择性生长的宽范围的生长温度(700-900℃)对于控制和优化选择性生长的GaN图案的刻面特性是至关重要的，这是潜在地制造特定于位置的GaN或InGaN量子点所需的。在硅上选择性生长GaN的简便性也暗示了GaN器件与硅器件的潜在片上集成。
The unique property of Si (111) as effective pseudomask substrate for selective growth of GaN by ammonia-molecular-beam epitaxy is reported. The critical nucleation temperature of GaN on Si (111) surface is found to be as low as 700°C, much lower than that on sapphire or AlN surface. As a result, selective growth of GaN is possible by ammonia-molecular-beam epitaxy on Si (111) substrates using a patterned AlN buffer layer. The wide range of growth temperatures (700–900°C) available for selective growth is a critical advantage for control and optimization of the facet characteristics of the selectively grown GaN patterns as required for potential fabrication of site-specific GaN or InGaN quantum dots. The demonstrated ease of selective growth of GaN on silicon has also implications in potential on-chip integration of GaN devices with silicon devices.
使用氨气源分子束外延选择性区域生长形成 GaN 纳米柱
DOI：
--
发表时间：
2002
期刊：
Journal of Crystal Growth 243
影响因子：
--
作者：
T.Fuse;S.Moriyama;M.Suzuki;Y.Aoyagi;K.Ishibashi;Koji Kawasaki
通讯作者：
Koji Kawasaki