Performance and Characterization of a Wide IF SIS-Mixer-Preamplifier Module Employing High-J c SIS Junctions

Performance and Characterization of a Wide IF SIS-Mixer-Preamplifier Module Employing High-J c SIS Junctions
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采用高 J c SIS 结的宽 IF SIS 混频器前置放大器模块的性能和表征

DOI:
10.1109/tthz.2017.2758260
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发表时间:
2017
影响因子:
3.2
通讯作者:
H. Takahashi and Y. Uzawa
H. Takahashi and Y. Uzawa
中科院分区:
工程技术2区
文献类型:
--
作者:
T. Kojima;M. Kroug;K. Uemizu;Y. Niizeki;H. Takahashi and Y. Uzawa

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本文报告了一种低噪声外差模块的仿真、性能和详细表征,该模块在385-500 GHz射频(RF)范围内具有非常宽的中频(IF)带宽。该模块集成了超导体-绝缘体-超导体(SIS)混频器和3-21 GHz低温低噪声混频器(CLNA)。高电流密度SIS结的利用提供了宽的RF带宽,并促进SIS结和CLNA之间的更好匹配。基于SIS混频器芯片的等效电路,我们计算了中频输出阻抗,并仿真了不同匹配条件对CLNA性能的影响。仿真预测,低噪声模块的性能可以在3-18 GHz的中频范围内获得,主要是由SIS混频器芯片中的寄生元件的限制。外差模块的测量结果表明,平坦的增益和70-80 K的典型噪声温度在3-18 GHz的中频范围内,在400-480 GHz的本振频率。在低温下,通过记录S参数直接测量混频器芯片的输出阻抗和CLNA的输入阻抗。结果使我们能够量化混频器IF电路中各种寄生元件的贡献。基于我们的模型的计算结果与测量结果吻合良好。
This paper reports the simulation, performance, and detailed characterization of a low-noise heterodyne module with very wide intermediate frequency (IF) bandwidth in the 385–500-GHz radio frequency (RF) range. The module integrates a superconductor–insulator–superconductor (SIS) mixer with a 3–21-GHz cryogenic low-noise preamplifier (CLNA). The utilization of high current density SIS junctions offers wide RF bandwidth and facilitates better matching between SIS junctions and the CLNA. Based on an equivalent circuit of the SIS mixer chip, we calculate the IF output impedance and simulate how different matching conditions affect the performance of the CLNA. Simulations predict that low-noise module performance can be obtained over a 3–18-GHz IF range, limited mainly by parasitic elements in the SIS mixer chip. The measurement results of the heterodyne module demonstrate flat gain and a typical noise temperature of 70–80 K over the 3–18-GHz IF range, at local oscillator frequencies of 400–480 GHz. Mixer chip output impedance and CLNA input impedance have been directly measured by recordingS-parameters at cryogenic temperatures. The results enabled us to quantify the contribution of various parasitic elements in the mixer IF circuitry. Calculations based on our model are in good agreement with measurements.
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