A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes
A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes
复制标题
用于高结电容雪崩光电二极管的过量噪声测量的跨阻放大器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
R. C. Tozer
中科院分区：
文献类型：
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作者：
James E. Green;J. David;R. C. Tozer
报道了一种新颖而通用的测量雪崩光电二极管(APD)中过量噪声和倍增的系统，该系统采用基于双极结晶体管的跨阻放大器前端，基于相敏检测，允许在存在高暗电流的情况下进行准确测量。该系统可以可靠地测量电容高达5nF的器件的过量噪声因数。该系统已被用于测量薄的、大面积的硅PIN APD，所得数据与从不同噪声测量系统获得的相同器件的测量结果非常一致，该测量系统将单独报告。
This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately.
影响因子：
2.5
作者：
Goh, Y. L.;Marshall, A. R. J.;Pinches, S. M.
通讯作者：
Pinches, S. M.