In Situ Growth Mechanism for High-Quality Hybrid Perovskite Single-Crystal Thin Films with High Area to Thickness Ratio: Looking for the Sweet Spot.
In Situ Growth Mechanism for High-Quality Hybrid Perovskite Single-Crystal Thin Films with High Area to Thickness Ratio: Looking for the Sweet Spot.
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高面积厚度比的高质量杂化钙钛矿单晶薄膜的原位生长机制：寻找最佳点。
DOI：
10.1002/advs.202104788
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发表时间：
2022-05
期刊：
影响因子：
15.1
通讯作者：
Wang, Kai
中科院分区：
文献类型：
--
作者：
Tang, Xiaobing;Wang, Zhaojin;Wu, Dan;Wu, Zhenghui;Ren, Zhenwei;Li, Ruxue;Liu, Pai;Mei, Guanding;Sun, Jiayun;Yu, Jiahao;Zheng, Fankai;Choy, Wallace C. H.;Chen, Rui;Sun, Xiao Wei;Yang, Fuqian;Wang, Kai
直接在空穴传输层（HTLs）上制备高质量钙钛矿单晶薄膜（sctf）的原位生长方法的发展对于提高光电器件的性能至关重要。然而，由于该工艺的生长机制难以捉摸，制造大面积、高质量、薄厚度的sctf仍然是一个重大挑战。在这项工作中，研究了三个关键因素对高质量大尺寸MAPbBr3 sctf在HTLs上原位生长的影响。确定了最佳“甜点”：前驱体溶液和衬底之间的界面能低，加热速率慢，前驱体溶液浓度适中。结果表明，厚度为540 nm的钙钛矿sctf的面积厚度比为1.94 × 104 mm， X射线衍射峰全宽为0.017°，超长载流子寿命为1552 ns。这些特性使得获得的钙钛矿sctf表现出创纪录的141 cm2 V−1 s−1的载流子迁移率和超过360天的良好长期结构稳定性。在空穴传输层（HTLs）上原位生长单晶薄膜（SCTFs）对于开发高性能光电器件至关重要。本文揭示了MAPbBr3 SCTFs在HTLs上的隐藏生长机制，通过调节界面能、前驱体溶液浓度和加热速率三个主要因素，获得了具有最大面积厚度比的高质量MAPbBr3 SCTFs。
The development of in situ growth methods for the fabrication of high‐quality perovskite single‐crystal thin films (SCTFs) directly on hole‐transport layers (HTLs) to boost the performance of optoelectronic devices is critically important. However, the fabrication of large‐area high‐quality SCTFs with thin thickness still remains a significant challenge due to the elusive growth mechanism of this process. In this work, the influence of three key factors on in situ growth of high‐quality large‐size MAPbBr3 SCTFs on HTLs is investigated. An optimal “sweet spot” is determined: low interface energy between the precursor solution and substrate, a slow heating rate, and a moderate precursor solution concentration. As a result, the as‐obtained perovskite SCTFs with a thickness of 540 nm achieve a record area to thickness ratio of 1.94 × 104 mm, a record X‐ray diffraction peak full width at half maximum of 0.017°, and an ultralong carrier lifetime of 1552 ns. These characteristics enable the as‐obtained perovskite SCTFs to exhibit a record carrier mobility of 141 cm2 V−1 s−1 and good long‐term structural stability over 360 days. In situ growth of single crystal thin films (SCTFs) on hole transport layers (HTLs) is of paramount importance for developing high‐performance optoelectronic devices. Here, hidden growth mechanism for MAPbBr3 SCTFs on HTLs is unraveled and high‐quality MAPbBr3 SCTFs with record largest area to thickness ratio are obtained through modulating three main factors: interface energy, precursor solution concentration, and heating rate.
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