Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy
Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy
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通过透射电子显微镜观察在具有 AlN 中间层的 GaN/蓝宝石模板上生长的 AlxGa1-xN 外延层的形态和微观结构演化
DOI：
10.1063/1.2932156
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发表时间：
2008-06
影响因子：
3.2
通讯作者：
Shen, B.
中科院分区：
文献类型：
--
作者：
Yang, Z. J.;Qin, Z. X.;Xu, F. J.;Yu, D. P.;Xu, J.;Zhang, G. Y.;Lu, L.;Zhang, X. P.;Huang, S.;Miao, Z. L.;Gao, B.;Shen, B.
Morphology and microstructure evolution of Al0.3Ga0.7N epilayers grown on GaN/sapphire templates with low-temperature (LT) AlN interlayers (ILs) by means of metal organic chemical vapor deposition have been investigated by transmission electron microscopy and atomic force microscopy. It is found that the IL improves the surface morphology, and suppresses edge-type threading dislocations (TDs). When the IL thickness is 20 nm, there is the lowest density of the edge-type TD with 8.7×108 cm-2. But the edge-type TD density increases somewhat as IL thickness increases to 40 nm. It is believed that two mechanisms determine the microstructure evolution of the AlxGa1-xN epilayers. One is the TDs suppression effect of LT-AlN ILs that ILs can provide an interface for edge-type TDs termination. Another is the TDs introduction effect of ILs that new edge-type TDs are produced. Due to the lattice mismatch between AlN, GaN and AlxGa1-xN, the strain in AlxGa1-xN epilayers is modified by inserting the AlN IL, and thus changes the formation of the edge-type TDs.
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影响因子：
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通讯作者：
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