Low-loss NiCuZn ferrite with matching permeability and permittivity by two-step sintering process
Low-loss NiCuZn ferrite with matching permeability and permittivity by two-step sintering process
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通过两步烧结工艺制备具有匹配磁导率和介电常数的低损耗 NiCuZn 铁氧体
DOI：
10.1063/1.4793508
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发表时间：
2013-02
影响因子：
3.2
通讯作者：
Zhong, Zhiyong
中科院分区：
文献类型：
--
作者：
Su, Hua;Tang, Xiaoli;Zhang, Huaiwu;Jing, Yulan;Bai, Feiming;Zhong, Zhiyong
具有匹配磁导率和介电常数的磁介电材料是很有希望的候选人，作为加载材料，以减少低频天线的物理尺寸。本研究采用传统的后段烧结工艺和两步烧结工艺制备NiCuZn铁氧体，以获得磁介电材料。研究发现，采用两步烧结工艺烧结的样品往往会获得致密、均匀、平均晶粒尺寸较小的显微组织，这有利于获得低的磁损耗和介电损耗。在950 °C高温和900 °C保温的两步烧结工艺下烧结的样品可以获得几乎相等的磁导率和介电常数，约为11.8。在10 ~ 100 MHz频率范围内，磁损耗和介质损耗均小于0.015。这些特性使得该材料可用于小型化天线的设计。
Magneto-dielectric materials with matched permeability and permittivity are promising candidates as loading materials to reduce the physical dimensions of low-frequency antennas. In this study, NiCuZn ferrites were prepared by both the traditional final-stage sintering process and the two-step sintering process to obtain the magneto-dielectric materials. It was found that the samples sintered by the two-step sintering process tended to obtain microstructure with dense, homogeneous, and small average grain size, which was favorable to obtain low magnetic and dielectric losses. The sample sintered by the two-step sintering process with high temperature 950 °C and holding temperature 900 °C could obtain almost equal permeability and permittivity of around 11.8. And the magnetic and dielectric loss tangents were lower than 0.015 in a frequency range from 10 to 100 MHz. These properties make the material useful to the design of miniaturized antennas.
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影响因子：
3.9
作者：
L. Kong;Zhaoliang Li;G. Lin;Y. Gan
通讯作者：
L. Kong;Zhaoliang Li;G. Lin;Y. Gan
影响因子：
6.2
作者：
M. Teo;L. Kong;Zhaoliang Li;G. Lin;Y. Gan
通讯作者：
M. Teo;L. Kong;Zhaoliang Li;G. Lin;Y. Gan
影响因子：
3.2
作者：
Su, Hua;Tang, Xiaoli;Shen, Jian
通讯作者：
Shen, Jian
影响因子：
6
作者：
A. Thakur;P. Thakur;J. Hsu
通讯作者：
A. Thakur;P. Thakur;J. Hsu
影响因子：
3.2
作者：
Jaejin Lee;Yang-Ki Hong;S. Bae;J. Jalli;G. Abo;Jihoon Park;W. Seong;Sang-Hoon Park;Won-Ki Ahn-Won-K
通讯作者：
Jaejin Lee;Yang-Ki Hong;S. Bae;J. Jalli;G. Abo;Jihoon Park;W. Seong;Sang-Hoon Park;Won-Ki Ahn-Won-K