Antimony enhanced homogeneous nitrogen incorporation into GaInNAs films grown by atomic hydrogen-assisted molecular beam epitaxy
Antimony enhanced homogeneous nitrogen incorporation into GaInNAs films grown by atomic hydrogen-assisted molecular beam epitaxy
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锑增强原子氢辅助分子束外延生长的 GaInNAs 薄膜中氮的均匀掺入
DOI：
10.1109/pvsc.2010.5616583
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Y. Okada
中科院分区：
文献类型：
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作者：
N. Miyashita;N. Ahsan;Y. Okada
在这项工作中，我们研究了Sb对GaInNAs薄膜中N诱导局域态的影响。从用不同Sb流量生长的GaInNAs(Sb)薄膜的77K光致发光(PL)谱来看，所有样品都观察到了单带到带的发射。发射波长随着Sb通量的增加而红移，这与Sb组分的增加相对应。当Sb注量在1~5×10−8Torr范围内时，发光强度和半高全宽均得到改善。另一方面，较高的Sb通量使发光特性变差。可以认为，任何较高的Sb通量都会导致某种与Sb有关的缺陷，如SBGA反位。此外，在随温度变化的光致发光测量中，所有样品都观察到了能量移动，即所谓的S曲线，这表明了强烈的载流子局域化。尽管GaInNAs样品显示出53 meV的大能量位移，但Sb的辐照使局域能量降低到13-22 meV。这些结果表明，Sb可以提高GaInNAs合金的均匀性，这是因为载流子局域化是由不均匀的N掺杂引起的。通过引入适量的Sb，改善了GaInNAsSb太阳电池的内量子效率特性，并实现了基波吸收边在1 eV范围内的红移。
In this work, we investigated the effect of Sb on N-induced localized states in GaInNAs films. From 77 K photoluminescence (PL) spectra for GaInNAs(Sb) films grown with different Sb fluxes, single band-to-band emissions observed in all samples. The emission wavelength redshifts with increasing Sb flux, which corresponds to an increase in Sb composition. The PL intensity and full-width at half maximum (FWHM) are both improved for a narrow range of Sb flux of 1 – 5×10−8 Torr. On the other, higher Sb flux deteriorates the PL characteristics. It can be thought that any higher Sb flux induces some kind of Sb-related defects such as SbGa antisites. Further in temperature dependent PL measurements, energy shifts, so-called “S-shaped” curves, were observed in all samples, which indicate a strong carrier localization. Although GaInNAs sample showed a large energy shift of 53 meV, irradiation of Sb decreases the localization energies to 13 – 22 meV. These results show that Sb can enhance the homogeneity of GaInNAs alloy, since the carrier localization is led by inhomogeneous N incorporation. The internal quantum efficiency characteristics for GaInNAsSb solar cell also improved by introducing an optimum amount of Sb and a redshift of fundamental absorption edge into 1 eV range was achieved.
原子氢辅助 RF-MBE 生长温度对 Ga(In)NAs 薄膜性能的影响
DOI：
--
发表时间：
2007
期刊：
Journal of Crystal Growth 301
影响因子：
--
作者：
Yukiko Shimizu;Naoya Miyashita;Yusuke Mura;Akira Uedono;Yoshitaka Okada
通讯作者：
Yoshitaka Okada