A Method of Junction Temperature Estimation for SiC Power MOSFETs via Turn-on Saturation Current Measurement
A Method of Junction Temperature Estimation for SiC Power MOSFETs via Turn-on Saturation Current Measurement
复制标题
一种通过导通饱和电流测量估算 SiC 功率 MOSFET 结温的方法
DOI：
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发表时间：
2019
影响因子：
1.7
通讯作者：
K. See
中科院分区：
文献类型：
--
作者：
Hui;R. Simanjorang;K. See
将 SiC 功率 MOSFET 的工作结温保持在安全和可承受的范围内不仅对于安全至关重要，而且对于可靠运行也至关重要，因为热瞬变是威胁器件寿命的主要压力因素之一。传统方法使用热传感器进行温度监测。然而，这些传感器需要额外的空间，并且测量精度受到其位置的影响。此外，由于响应时间相对较慢，它们无法跟踪瞬态温度变化。本文提出了一种新的无温度传感器方法，通过测量器件的导通饱和电流 (ID,sat) 来估计 SiC 功率 MOSFET 的结温。可以提取器件的饱和电流 (√ ID,sat) 和阈值电压 (Vth) 的平方根并将其用作结温估算器。与阈值电压相比，饱和电流平方根的优点是测试时间更短。实验验证了该温度估计方法的可行性。结果表明，所提出的方法可以用作有效在线结温监测的替代方法。
Maintaining the operating junction temperature of a SiC Power MOSFET within a safe and tolerable range is crucial not only for safety reasons, but also for reliable operation, as thermal transient is one of the major stressors that threaten a device’s life span. Conventional methods use thermal sensors for temperature monitoring. However, these sensors require extra space, and the measurement accuracy is affected by their position. Besides, they are unable to track the transient temperature variation owing to relatively slow response time. This paper proposes a new temperature sensor-less method to estimate the junction temperature of SiC power MOSFETs by measuring the device’s turn-on saturation current (ID,sat). The device’s square root of the saturation current ( √ ID,sat) and threshold voltage (Vth) can be extracted and adopted as junction temperature estimators. Compared to the threshold voltage, the square root of the saturation current has the advantage of a shorter test time. The feasibility of this temperature estimation method has been experimentally verified. The results suggest that the proposed method can be used as an alternative for effective online junction temperature monitoring.
影响因子：
6.7
作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer
通讯作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer
DOI：
10.1109/tdmr.2013.2292547
发表时间：
2014-03-01
影响因子：
2
作者：
Chen, Huifeng;Ji, Bing;Cao, Wenping
通讯作者：
Cao, Wenping