High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
复制标题
采用 HfO2 栅极电介质的 65 nm 应变 Ge p 沟道场效应晶体管具有高空穴迁移率
DOI：
10.1143/jjap.50.04dc17
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发表时间：
2011
影响因子：
1.5
通讯作者：
T. Hoffmann
中科院分区：
文献类型：
--
作者：
J. Mitard;B. D. Jaeger;G. Eneman;A. Dobbie;M. Myronov;M. Kobayashi;J. Geypen;H. Bender;B. Vincent;R. Krom;J. Franco;G. Winderickx;E. Vrancken;W. Vanherle;Wei;J. Tseng;R. Loo;K. Meyer;M. Caymax;L. Pantisano;D. Leadley;M. Meuris;P. Absil;S. Biesemans;T. Hoffmann
首次采用65纳米技术制造了双轴应变Ge p沟道场效应晶体管（pFET）。该器件被设计为具有减小的有效氧化物厚度（EOT），同时保持最小化的短沟道效应。通过深入的电学表征研究了低场和高场输运，显示出应变器件中的高空穴迁移率提高了高达70%。口袋植入物在降低驱动电流的重要作用是突出的。使用一个明智的注入方案，我们证明了一个显着的增益在纳米级应变锗pFET的导通电流（高达35%）。同时优化的栅极金属和电介质，连同相应的单轴应力工程，被确定为一个有前途的路径，进一步提高性能。
Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied by in-depth electrical characterization, showing a high hole-mobility that is enhanced by up to 70% in the strained devices. The important role of pocket implants in degrading the drive current is highlighted. Using a judicious implantation scheme, we demonstrate a significant gain in on-current (up to 35%) for nanoscaled strained Ge pFETs. Simultaneous optimization of the gate metal and dielectric, together with the corresponding uniaxial stress engineering, is identified as a promising path for further performance enhancement.
影响因子：
4
作者：
Shah, V. A.;Dobbie, A.;Leadley, D. R.
通讯作者：
Leadley, D. R.