Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology
Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology
复制标题
平面金属氧化物半导体场效应晶体管中硅凹陷与等离子体损伤形成的缺陷密度之间的权衡关系及优化方法
DOI：
10.1143/jjap.50.08kd04
复制
发表时间：
2011
影响因子：
1.5
通讯作者：
K. Ono
中科院分区：
文献类型：
--
作者：
K. Eriguchi;Y. Nakakubo;Asahiko Matsuda;M. Kamei;Y. Takao;K. Ono
从表面损伤层（硅损失）与表面下缺陷位置的关系出发，对等离子体加工过程中高能离子轰击引起的物理损伤进行了表征。基于修正极差理论，计算了等离子体损伤（PID）参数、硅凹槽深度（dR）和湿蚀处理后残余（面）缺陷密度（Ndam），并给出了dR和Ndam之间的权衡关系。我们还模拟了它们对器件参数的影响，如n沟道金属氧化物半导体场效应晶体管（mosfet）的断开状态泄漏（Ioff）和漏极饱和电流（Ion）。在此基础上，我们明确了等离子体过程参数（离子能量和离子通量）与dR、Ndam、Ioff和ion之间的关系。然后，我们提出了一种方法，通过dR和Ndam在器件规格Ioff和ion定义的约束下优化离子能量和离子通量。这个过程被认为是所谓的最优化问题。所提出的方法适用于优化等离子体参数，最大限度地减少PID对MOSFET性能的降低。
Physical damage induced by high-energy ion bombardment during plasma processing is characterized from the viewpoint of the relationship between surface-damaged layer (silicon loss) and defect site underneath the surface. Parameters for plasma-induced damage (PID), Si recess depth (dR) and residual (areal) defect density after wet-etch treatment (Ndam), are calculated on the basis of a modified range theory, and the trade-off relationship between dR and Ndam is presented. We also model their effects on device parameters such as off-state leakage (Ioff) and drain saturation current (Ion) of n-channel metal–oxide–semiconductor field effect transistors (MOSFETs). Based on the models, we clarify the relationship among plasma process parameters (ion energy and ion flux), dR, Ndam, Ioff, and Ion. Then we propose a methodology optimizing ion energy and ion flux under the constraints defined by device specifications Ioff and Ion, via dR and Ndam. This procedure is regarded as so-called optimization problems. The proposed methodology is applicable to optimizing plasma parameters that minimize degradation of MOSFET performance by PID.
硅蚀刻的原子尺度细胞模型和轮廓模拟：轮廓异常和微观均匀性分析
DOI：
--
发表时间：
2010
期刊：
Jpn. J. Appl. Phys.
影响因子：
--
作者：
H. Tsuda;M. Mori;Y. Takao;K. Eriguchi;and K. Ono
通讯作者：
and K. Ono