Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper.
Flux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper.
复制标题
空心阴极磁控管电离铜物理气相沉积中物质的通量和能量分析。
DOI：
10.1063/1.3504371
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
D. Ruzic
中科院分区：
文献类型：
--
作者：
L. Wu;E. Ko;A. Dulkin;K. J. Park;S. Fields;K. Leeser;L. Meng;D. Ruzic
为了满足sub- 32nm互连金属化技术的严格要求，进一步推进电离物理气相沉积技术必须对成膜物质的通量和能量进行前所未有的控制。这种技术的发展要求改进量化金属离子分数、气体/金属离子比以及到基体的总离子通量中相关离子能量的方法。本文提出了一种结合平面朗缪尔探针、石英晶体微天平（QCM）和栅格能量分析仪（GEA）定制仪器的新方法，用于估算等离子体密度和温度，以及测量金属离子分数和离子能量。测量是在Novellus系统公司进行的。空心阴极磁控管（HCM(TM)）物理气相沉积源，用于沉积65-130 nm工艺节点的Cu种子层。采用网格能量分析仪测量离子通量和离子能量，并与平面Langmuir探针数据进行对比。总离子与金属中性比采用QCM结合GEA测定。讨论了数据采集技术和相应的分析。讨论了沉积过程中同步重镀膜对薄膜厚度分布的影响。
To meet the stringent requirements of interconnect metallization for sub-32 nm technologies, an unprecedented level of flux and energy control of film forming species has become necessary to further advance ionized physical vapor deposition technology. Such technology development mandates improvements in methods to quantify the metal ion fraction, the gas∕metal ion ratio, and the associated ion energies in the total ion flux to the substrate. In this work, a novel method combining planar Langmuir probes, quartz crystal microbalance (QCM), and gridded energy analyzer (GEA) custom instrumentation is developed to estimate the plasma density and temperature as well as to measure the metal ion fraction and ion energy. The measurements were conducted in a Novellus Systems, Inc. Hollow Cathode Magnetron (HCM(TM)) physical vapor deposition source used for deposition of Cu seed layer for 65-130 nm technology nodes. The gridded energy analyzer was employed to measure ion flux and ion energy, which was compared to the collocated planar Langmuir probe data. The total ion-to-metal neutral ratio was determined by the QCM combined with GEA. The data collection technique and the corresponding analysis are discussed. The effect of concurrent resputtering during the deposition process on film thickness profile is also discussed.
“激光分子束外延法室温生长 AIN/TiN 外延多层”固体薄膜
DOI：
--
发表时间：
2008
期刊：
Thin Solid Films 516
影响因子：
--
作者：
Miao Zhang;・広川 二郎・安藤 真;Wakana Hara;Wakana Hara
通讯作者：
Wakana Hara