Characterisation of Glasgow/CNM Double-Sided 3D Sensors

Characterisation of Glasgow/CNM Double-Sided 3D Sensors
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Glasgow/CNM 双面 3D 传感器的表征

DOI:
10.1016/j.phpro.2012.02.445
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发表时间:
2012
期刊:
Physics Procedia
影响因子:
--
通讯作者:
Raighne A
Raighne A
中科院分区:
--
文献类型:
--
作者:
Raighne A

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3D 探测器被提议作为平面硅技术的替代方案,以承受计划的未来高能物理实验中的高辐射环境。在这里,我们回顾了 CNM 和格拉斯哥大学设计和制造的双面 3D 探测器的特性。非辐照传感器的特征在于利用 Timepix 望远镜的π介子测试光束。显示了单位像素上的电荷收集和检测效率。在垂直光束入射角的柱状电极处可以发现效率低下的区域,而在大于十度的角度下像素则显示出完全有效。与平面技术相比,还证明了电荷共享的减少。对采用 Sr-90 源的辐照设备进行的电荷收集研究表明,在显着降低的外加偏压下,3D 传感器的电荷收集效率高于平面传感器。通过微聚焦激光束探测子像素响应,展示高偏置电压下的电荷倍增区域。
3D detectors are proposed as an alternative to planar silicon technology to withstand the high radiation environments in planned future high energy physics experiments. Here we review the characterization of double-sided 3D detectors designed and built at CNM and the University of Glasgow. A non-irradiated sensor is characterized in a pion test-beamutilizing the Timepix telescope. The charge collection and detection efficiency across the unit pixel are shown. Area of inefficiency can be found at the columnar electrodes at perpendicular angles of beam incidence while the pixels are shown to be fully efficient at angles greater than ten degrees. A reduction in charge sharing compared to the planar technology is also demonstrated. Charge collection studies on irradiated devices with a Sr-90 source show higher charge collection efficiency for 3D over planar sensors at significantly lower applied bias. The sub-pixel response is probed by a micro-focused laser beam demonstrating areas of charge multiplication at high bias voltages.
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