Regulation of Voltage-Activated K(+) Channel Gating by Transmembrane β Subunits.
Regulation of Voltage-Activated K(+) Channel Gating by Transmembrane β Subunits.
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DOI：
10.3389/fphar.2012.00063
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发表时间：
2012
影响因子：
5.6
通讯作者：
Cui J
中科院分区：
文献类型：
--
作者：
Sun X;Zaydman MA;Cui J
电压激活的K+ (KV)通道对于形成动作电位和维持可兴奋细胞的静息膜电位具有重要意义。KV通道包含一个中心孔门域（PGD），周围是四个电压感应域（vsd）。vsd将改变构象，以响应膜电位的改变，从而诱导PGD的开放。许多KV通道是含有辅助β亚基的异质蛋白复合物。这些β亚基调节通道的表达和活性，以增加功能多样性并呈现组织特异性表型。本文综述了包含跨膜（TM）片段的KV β亚基，包括KCNE家族和大电导、Ca2+和电压激活的K+ (BK)通道的β亚基。这些TM β亚基影响KV α亚基的电压依赖性激活。实验和计算研究已经描述了这些β亚基在通道复合物中的结构位置，以及VSD激活、PGD打开和VSD - PGD耦合的生物物理效应。这些结果揭示了TM β亚基调制KV信道的一些共同特征和机理。
Voltage-activated K+ (KV) channels are important for shaping action potentials and maintaining resting membrane potential in excitable cells. KV channels contain a central pore-gate domain (PGD) surrounded by four voltage-sensing domains (VSDs). The VSDs will change conformation in response to alterations of the membrane potential thereby inducing the opening of the PGD. Many KV channels are heteromeric protein complexes containing auxiliary β subunits. These β subunits modulate channel expression and activity to increase functional diversity and render tissue specific phenotypes. This review focuses on the KV β subunits that contain transmembrane (TM) segments including the KCNE family and the β subunits of large conductance, Ca2+- and voltage-activated K+ (BK) channels. These TM β subunits affect the voltage-dependent activation of KV α subunits. Experimental and computational studies have described the structural location of these β subunits in the channel complexes and the biophysical effects on VSD activation, PGD opening, and VSD–PGD coupling. These results reveal some common characteristics and mechanistic insights into KV channel modulation by TM β subunits.
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影响因子：
3.7
作者：
Chen J;Zheng R;Melman YF;McDonald TV
通讯作者：
McDonald TV
影响因子：
3.7
作者：
Chen M;Gan G;Wu Y;Wang L;Wu Y;Ding J
通讯作者：
Ding J
DOI：
10.1085/jgp.201010573
发表时间：
2011-05
期刊：
The Journal of general physiology
影响因子：
--
作者：
Haddad GA;Blunck R
通讯作者：
Blunck R
影响因子：
4.8
作者：
Franqueza, L;Lin, M;Sanguinetti, MC
通讯作者：
Sanguinetti, MC
影响因子：
4.8
作者：
Brenner, R;Jegla, TJ;Aldrich, RW
通讯作者：
Aldrich, RW