Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
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通过各种预沉积处理在 Si 上生长的 ALD HfO2 和 La2O3 栅极电介质的薄膜特性
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
P. Tobin
中科院分区：
文献类型：
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作者：
D. Triyoso;R. Hegde;J. Grant;P. Fejes;Ran Liu;D. Roan;M. Ramón;D. Werho;R. Rai;L. La;J. Baker;C. Garza;T. Guenther;B. White;P. Tobin
In this article, we report film properties of HfO2 and La2O3 gate dielectrics grown on Si(100) substrate using atomic layer deposition (ALD) with various surfaces modified before film growth. The precursors used for HfO2 and La2O3 films are hafnium tetrachloride (HfCl4), lanthanum tris[bis(trimethylsilyl)amide] (C18H54N3LaSi6) and water. Pre-deposition treatments examined for HfO2 dielectric films include (1) surface nitridation using NH3, N2O, or NO, (2) substrate annealing in an oxidizing or reducing ambient, and (3) surface fluorination. These results were compared to those obtained using established approaches of growing HfO2 on an OH terminated surface produced chemically. Linear film growth was observed for the HfO2 with all pre-deposition treatments. Time-of-flight-secondary ion mass spectrometry (TOF-SIMS) and transmission electron microscopy (TEM) analysis indicated that all pre-treatments result in good film coverage with no interaction between HfO2 and silicon at the silicon substrate. The as d...
影响因子：
3.9
作者：
S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima;H. Ishiwara;H. Iwai
通讯作者：
S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima;H. Ishiwara;H. Iwai