Matrix effect on the photoluminescence of Si nanocrystal
Matrix effect on the photoluminescence of Si nanocrystal
复制标题
基体效应对硅纳米晶光致发光的影响
DOI：
10.1007/s11051-012-1097-9
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发表时间：
2012-08
影响因子：
2.5
通讯作者：
陆明
中科院分区：
文献类型：
--
作者：
陆明
To examine the matrix effect on the light emission of Si nanocrystal (Si-NC), we investigated the photoluminescence (PL) of Si-NC from multilayered samples of Si/SiO2and SiO/SiO2and single-layered pure Si thin films, which had all been annealed in nitrogen at 1,100 °C for 1 h so as to form Si-NCs. The size range of Si-NC is 1–10 nm. It was found that the density of Si-NC in the pure Si> that in Si/SiO2> that in SiO/SiO2, but the PL intensity of Si-NC from pure Si< that from Si/SiO2< that from SiO/SiO2. On the other hand, the PL intensity of Si-NC from Si/SiO2sample is higher than that from Si/Si3N4one. All these results are related to the difference in matrix surrounding Si-NCs, which causes differences in carrier confinement or/and interface state. The results suggest that for light emission of Si-NC, the matrix effect is determinative, and can be more important than the density of Si-NC itself.
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影响因子：
1.4
作者：
Keisuke Sato;K. Hirakuri
通讯作者：
Keisuke Sato;K. Hirakuri
影响因子：
--
作者：
Li D;Chen YB;Ren Y;Zhu J;Zhao YY;Lu M
通讯作者：
Lu M
影响因子：
64.8
作者：
Lorenzo Pavesi;L. D. Negro;C. Mazzoleni;G. Franzò;F. Priolo
通讯作者：
Lorenzo Pavesi;L. D. Negro;C. Mazzoleni;G. Franzò;F. Priolo
影响因子：
38.3
作者：
U. Gösele
通讯作者：
U. Gösele
影响因子：
64.8
作者：
LU, ZH;LOCKWOOD, DJ;BARIBEAU, JM
通讯作者：
BARIBEAU, JM