Optical properties of wurtzite GaN grown by low‐pressure metalorganic chemical‐vapor deposition
Optical properties of wurtzite GaN grown by low‐pressure metalorganic chemical‐vapor deposition
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低压有机金属化学气相沉积纤锌矿GaN的光学性质
DOI：
10.1063/1.361200
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
B. Goldenberg
中科院分区：
文献类型：
--
作者：
W. Shan;T. Schmidt;X. Yang;J. Song;B. Goldenberg
我们介绍了通过低压金属有机化学气相沉积生长GaN的光学研究结果，重点介绍了器件应用中的重要问题，如受激发射和激光作用以及载流子弛豫动力学。通过光泵浦，在高达420 K的宽温度范围内研究了受激发射和激光。利用皮秒条纹相机，研究了自由激子和束缚激子的发射衰减时间。此外，利用各种光谱方法，包括光致发光和光反射，研究了温度和压力对光学带间跃迁和与杂质/缺陷态相关的跃迁的影响。利用经验Varshni关系绘制了GaN的基本带隙作为温度的函数。间隙的压力系数是用金刚石砧压力细胞技术测定的。直接Γ带隙的静水变形势也比较大。
We present the results of optical studies on the properties of GaN grown by low‐pressure metalorganic chemical‐vapor deposition, with emphasis on the issues vital to device applications such as stimulated emission and laser action as well as carrier relaxation dynamics. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. Using a picosecond streak camera, the free and bound exciton emission decay times were examined. In addition, the effects of temperature and pressure on the optical interband transitions and the transitions associated with impurity/defect states were studied using a variety of spectroscopic methods, including photoluminescence and photoreflectance. The fundamental band gap of GaN was mapped out as a function of temperature using the empirical Varshni relation. The pressure coefficient of the gap was determined using diamond‐anvil pressure‐cell technique. The hydrostatic deformation potential for the direct Γ band gap was also der...
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M