High-quality boron carbide nanowires prepared by catalyst-free template growth method

High-quality boron carbide nanowires prepared by catalyst-free template growth method
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无催化剂模板生长法制备高质量碳化硼纳米线

DOI:
10.1016/j.ceramint.2022.04.168
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发表时间:
2022-04
影响因子:
5.2
通讯作者:
Gaohui Wu
Gaohui Wu
中科院分区:
材料科学1区
文献类型:
--
作者:
Yiming Wu;Yanxin Liu;Zeyang Kuang;Murid Hussain;Wenshu Yang;Chang Zhou;Gaohui Wu

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本文采用无催化剂模板法在低温下制备了高质量的碳化硼纳米线。通过SEM、XRD、TEM等测试手段,探索最佳制备工艺参数。然后,选择8小时的球磨过程和1050 °C的生长温度作为应用于硼衬底和碳纳米管(CNT)模板的最合适的参数。所得B4 C纳米线具有良好的结晶性,平均直径为60 nm,长度为1-5 μm。此外,还研究了碳纳米管的生长机理,即硼粉与碳纳米管之间的扩散和晶体重构,而球磨过程通过分散碳纳米管和在碳纳米管模板上引入更多的缺陷来促进碳纳米管的生长。最后,制备了体积分数为5%的B4 C纳米线/Al复合材料,B4 C纳米线表现出高达215%的高强化效果。本工作为一维陶瓷材料及其在复合材料中的应用提供了新的研究思路。
In this study, high-quality boron carbide nanowires (B4C-nanowires) were prepared via catalyst-free template growth (TG) method at low temperatures. SEM, XRD and TEM tests were carried out to explore the most suitable preparation parameters. Then, a ball milling process of 8 h and a growth temperature of 1050 °C were selected as the most suitable parameters to be applied to the boron substrate and carbon nanotubes (CNTs) template. The obtained B4C-nanowires possess a good crystallinity with an average diameter of 60 nm and lengths of 1–5 μm. In addition, the growth mechanism was studied as the diffusion and crystal reconstruction between the boron powders and the CNTs, while the ball-milling process improved the growth by dispersing CNTs and introducing more defects to the CNTs template. Finally, 5 vol% B4C-nanowires/Al composites were fabricated with the B4C-nanowires exhibited a high strengthening effect up to 215%. This work offered a new research idea for one-dimension ceramic materials and their application in composites.
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