Enhancement of In-field Jc in Gd1Ba2Cu3O7-δ Coated Conductor by Using Highly Oriented IBAD Substrate
Enhancement of In-field Jc in Gd1Ba2Cu3O7-δ Coated Conductor by Using Highly Oriented IBAD Substrate
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使用高取向 IBAD 基底增强 Gd1Ba2Cu3O7-δ 涂层导体的内场 Jc
DOI：
10.1016/j.phpro.2015.06.152
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
T. Kiss
中科院分区：
文献类型：
--
作者：
M. Inoue;K. Tanaka;K. Imamura;K. Higashikawa;S. Awaji;K. Watanabe;T. Taneda;M. Yoshizumi;T. Izumi;T. Kiss
我们研究了在不同质量的IBAD衬底上沉积的两种G1dBa2Cu3O7-δ(GdBCO)涂层导体的电流输运特性，即衬底的面内排列分别为1.98°和2.78°。结果表明，采用高取向IBAD衬底的样品，在较宽的温度和磁场范围内，Jc增强，而不可逆场和钉扎力密度(Fp)形状变化不大。此外，在实际高场区的低温下，还观察到了比在标准IBAD衬底上沉积的BaHfO_3掺杂GdBCO涂层导体更高的场强J_c。这些结果表明，即使在2~3°的范围内，基片面内织构的改善对于改善场内Jc仍然是非常有效的。
We have investigated current transport properties in two G1dBa2Cu3O7-δ(GdBCO) coated conductors deposited on different quality of IBAD substrate, i.e., in-plane alignments of the substrate are 1.98° and 2.78°, respectively. From the comparison,Jcenhancement has been confirmed in wide temperature and magnetic field region in the sample using highly oriented IBAD substrate, whereas the irreversibility field and shape of pinning force density (Fp) does not change much. Furthermore, higher in-filedJcthan that of BaHfO3doped GdBCO coated conductor deposited on standard IBAD substrate has also been observed in practical high field region at low temperature. These results indicate that the improvement of in-plane texturing in the substrate is still very effective even in such range of 2 to 3° to improve in-fieldJc.
影响因子：
1.8
作者：
Takahiro Taneda;M. Yoshizumi;Takahiko Takahashi;Reiji Kuriki;Takaomi Shinozaki;T. Izumi;Y. Shiohara;Y. Iijima;T. Saitoh;Ryuji Yoshida;T. Kato;Tsukasa Hirayama;T. Kiss
通讯作者：
T. Kiss