Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering
Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering
复制标题
利用紫外共振拉曼散射扫描近场光学拉曼显微镜对应变 Si∕SiGe 异质结构的近场拉曼散射光进行高灵敏度检测
DOI：
10.1063/1.2870201
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发表时间：
2008
影响因子：
4
通讯作者：
H. Ishida
中科院分区：
文献类型：
--
作者：
M. Yoshikawa;M. Murakami;H. Ishida
我们研制了一种扫描近场拉曼显微镜（SNORM），它带有一个空心锥形探针，利用紫外共振拉曼散射测量应变Si ScinSiGe异质结构的近场和远场拉曼强度随探针-样品距离R的变化。我们观察到应变Si膜的近场拉曼强度随着探针-样品距离的增加而显着降低。近场拉曼强度的衰减曲线近似表示为从基于偶极-偶极相互作用的简单模型计算的R−3曲线。这证实了我们的SNORM检测到来自样品的近场光。
We have developed a scanning near-field Raman microscope (SNORM) with a hollow pyramidal probe that uses ultraviolet resonant Raman scattering and measured changes in the near-field and far-field Raman intensities of strained Si∕SiGe heterostructures as a function of a probe-sample distance R. We observed that the near-field Raman intensity of a strained Si film dramatically decreased with an increase in the probe-sample distance. The decay curve of the near-field Raman intensity was approximately expressed by the R−3 plot calculated from a simple model based on dipole-dipole interaction. This confirms that our SNORM detects the near-field light from the sample.
影响因子：
4
作者：
Sawano, K;Koh, S;Nakagawa, K
通讯作者：
Nakagawa, K