Size-dependent electrical transport properties in Co nanocluster-assembled granular films.
Size-dependent electrical transport properties in Co nanocluster-assembled granular films.
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Co纳米团簇组装颗粒薄膜中尺寸依赖的电传输特性
DOI：
10.1038/s41598-017-11983-7
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发表时间：
2017-09-15
影响因子：
4.6
通讯作者：
Peng DL
中科院分区：
文献类型：
--
作者：
Zhang QF;Wang XZ;Wang LS;Zheng HF;Lin L;Xie J;Liu X;Qiu YL;Chen YZ;Peng DL
采用等离子体气体冷凝法制备了一系列Co纳米团簇组装膜，团簇尺寸在4.5 ~ 14.7 nm之间。系统地研究了尺寸依赖的电输运性质。随着团簇尺寸d的减小，纵向电阻率和饱和反常霍尔电阻率均不断增大。随着温度的升高，所有样品的热膨胀系数先增大后减小，这可以用热涨落诱导隧穿（FIT）过程和散射过程很好地描述。证明了隧道效应导致了经典反常霍尔效应标度关系的失效。在扣除隧道效应对的贡献后，重建了温度变化时的AHE标度关系。标度指数γ的值随着Co团簇尺寸的增大而增大。γ的尺寸依赖性可以通过界面和表面诱导自旋翻转散射来定性解释。通过改变Co团簇的尺寸，我们还确定了在5 K时γ与γ的标度关系，得到了一个较大的γ= 3.6，这可能归因于表面和界面的散射。
A series of Co nanocluster-assembled films with cluster sizes ranging from 4.5 nm to 14.7 nm were prepared by the plasma-gas-condensation method. The size-dependent electrical transport properties were systematically investigated. Both of the longitudinal resistivity () and saturated anomalous Hall resistivity () continuously increased with the decrease of the cluster sizes (d). Thefirstly increased and then decreased with increasing the temperature for all samples, which could be well described by involving the thermally fluctuation-induced tunneling (FIT) process and scattering. The tunneling effect was verified to result in the invalidation of classical anomalous Hall effect (AHE) scaling relation. After deducting the contribution from tunneling effect to, the AHE scaling relation betweenand the scattering resistivity () by varying the temperature was reconstructed. The value of scaling exponentγincreased with increasing Co cluster sizes. The size dependence ofγmight be qualitatively interpreted by the interface and surface-induced spin flip scattering. We also determined the scaling relation betweenandat 5 K by changing the Co cluster sizes, and a large value ofγ= 3.6 was obtained which might be ascribed to the surface and interfacial scattering.
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影响因子：
3.7
作者：
Canedy, CL;Li, XW;Xiao, G
通讯作者：
Xiao, G
影响因子：
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作者：
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通讯作者：
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作者：
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通讯作者：
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作者：
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通讯作者：
LUTTINGER, JM