Performance trends in high-end processors
Performance trends in high-end processors
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高端处理器的性能趋势
DOI：
10.1109/5.362754
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
G. Sai
中科院分区：
文献类型：
--
作者：
G. Sai
基于一阶周期时间模型，预测了双极和CMOS处理器的性能趋势和限制。确定趋势的关键是了解技术进步任何特定阶段的关键因素。一个这样的参数是处理器的物理面积。在未来的技术中，由于需要减少互连电容的比例并在处理器上发送信号，因此将对系统的面积提出相反的要求。与通常的看法相反，如果处理器面积增加，则由布线电容引起的延迟会减少，而信号传播时间的最小化有利于减少面积。在双极处理器的情况下，系统尺寸的权衡主要由功率密度决定，而CMOS处理器的尺寸由可布线性要求决定。为了充分发挥CMOS的潜力，必须仔细规划互连。双极型和室温CMOS单处理器的性能极限是非常相似的。目前性能最高的技术是液氮温度CMOS。基于III-V族化合物器件或更奇特的量子结构的替代技术预计不会在未来的通用高端系统中发挥作用。>
Based on a first order cycle time model performance trends and limits are projected for both bipolar and CMOS processors. The key in identifying trends is the understanding of the pivotal factors at any given stage of technology progression. One such parameter is the physical area of the processor. In coming technologies there will be opposite demands placed on the system's area stemming from a need to reduce the proportion of interconnection capacitance and to send signals across the processor. Contrary to the usual perception, delays resulting from wiring capacitance decrease if processor area increases, while the minimization of signal travel times favors reducing area. The system size tradeoff in the case of bipolar processors is primarily determined by power density, while CMOS processor sizes are determined by wirability requirements. To achieve the full potential of CMOS, interconnections will have to be carefully planned. The performance limits of bipolar and room temperature CMOS uniprocessors are shown to be very similar. The highest performance technology on the horizon is liquid nitrogen temperature CMOS. Alternate technologies, based on III-V compound devices, or more exotic quantum structures, are not expected to play a role in future general-purpose high-end systems. >
宽带隙半导体器件二维载流子迁移率的蒙特卡罗模拟
DOI：
--
发表时间：
2021
期刊：
影响因子：
--
作者：
N. Mori;H. Tanaka;T. Hoshino;G. Mil'nikov
通讯作者：
G. Mil'nikov