Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD
Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD
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脉冲原子层外延Al0.3Ga0.7As中间层对MOCVD生长GaAs/Ge异质集成的影响
DOI：
10.1016/j.jallcom.2013.12.092
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发表时间：
2014-03
影响因子：
6.2
通讯作者：
Changqing Chen
中科院分区：
文献类型：
--
作者：
Shichuang Sun;Zhiqiang Qi;Huiquan Chen;Xuehua Wang;Wu Tian;Feng Wu;Zhihao Wu;Jiangnan Dai;Changqing Chen
本文采用Al0.3Ga0.7As中间层和脉冲原子层外延（PALE）技术，采用有机金属化学气相沉积（MOCVD）技术，在Ge（0 0 1）衬底上沿（1 1 1）面9°切角生长出高质量的GaAs薄膜。研究了不同生长顺序的Al0.3Ga0.7As PALE中间层AlAs/GaAs PALE和AlGa/AlGaAs PALE对GaAs外延层形貌、结构和光学性能的影响。结果表明，Al0.3Ga0.7As PALE 中间层能够有效消除反相域（APD）并抑制 Ge 原子在异质界面的外扩散。此外，Al0.3Ga0.7As PALE 中间层的优化生长顺序 AlAs/GaAs PALE 可以获得最光滑的表面形貌（均方根 (RMS) 0.43 nm）和最佳的晶体质量，这归因于 AsH3 曝光时间的控制确保了更少的作为缺陷中心的 As 空位。
In this paper, high quality GaAs films on Ge (0 0 1) substrates with 9° offcut toward the (1 1 1) plane were grown by metal organic chemical vapor deposition (MOCVD) through adopting the Al0.3Ga0.7As interlayers with pulsed atomic layer epitaxy (PALE) technology. The effects of Al0.3Ga0.7As PALE interlayers with different growth sequences, AlAs/GaAs PALE and AlGa/AlGaAs PALE, on the morphological, structural and optical properties of GaAs epilayers were investigated. The results showed that Al0.3Ga0.7As PALE interlayers were preferred to eliminate anti-phase domains (APDs) and suppress Ge atoms outdiffusion at the heterointerface, effectively. Additionally, AlAs/GaAs PALE, the optimized growth sequence of Al0.3Ga0.7As PALE interlayers, could obtain the smoothest surface morphology (root-mean-square (RMS) 0.43 nm) and best crystalline quality, which was attributed to the control of AsH3exposure time ensuring fewer As vacancies acting as defect centers.
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金属有机化学气相沉积 Ge 衬底上 Al0.3Ga0.7As 中间层厚度对 GaAs 质量的影响
DOI：
10.1116/1.4809514
发表时间：
2013-06
期刊：
Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena
影响因子：
--
作者：
Senlin Li;Qingqing Chen;Jin Zhang;Huiquan Chen;Wei Xu;Hui Xiong;Zhihao Wu;YanYan Fang;Changqing Chen
通讯作者：
Changqing Chen
影响因子：
1.8
作者：
Li, W;Laaksonen, S;Pessa, M
通讯作者：
Pessa, M
影响因子：
4
作者：
J. Carlin;S. Ringel;E. Fitzgerald;M. Bulsara;B. Keyes
通讯作者：
J. Carlin;S. Ringel;E. Fitzgerald;M. Bulsara;B. Keyes
影响因子：
1.8
作者：
KROEMER, H
通讯作者：
KROEMER, H
影响因子：
3.2
作者：
C. Chia;G. Dalapati;Y. Chai;Shao-ping Lu;Weiwei He;Jing-xing Dong;D. Seng;H. K. Hui;A. Wong;A. Lau;Yuanbing Cheng;D. Chi;Zhifeng Zhu;Y. Yeo;Z. Xu;S. Yoon
通讯作者：
C. Chia;G. Dalapati;Y. Chai;Shao-ping Lu;Weiwei He;Jing-xing Dong;D. Seng;H. K. Hui;A. Wong;A. Lau;Yuanbing Cheng;D. Chi;Zhifeng Zhu;Y. Yeo;Z. Xu;S. Yoon