An orbitally derived single-atom magnetic memory.
An orbitally derived single-atom magnetic memory.
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DOI：
10.1038/s41467-018-06337-4
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发表时间：
2018-09-25
影响因子：
16.6
通讯作者：
Khajetoorians AA
中科院分区：
文献类型：
--
作者：
Kiraly B;Rudenko AN;van Weerdenburg WMJ;Wegner D;Katsnelson MI;Khajetoorians AA
磁性原子集中体现了磁性信息存储的定标极限。单个原子自旋最近表现出磁剩磁，这是磁记忆的要求。然而，这种存储只在薄的绝缘表面上实现，通过电子选通或交换驱动的磁耦合消除了潜在的可调性。在这里，我们展示了一种以前未被观察到的单原子磁存储机制，该机制基于半导体黑磷(BP)上单个Co原子的轨道布居的双稳性，即所谓的价态。从头算计算表明，距离依赖于BP表面的屏蔽稳定了两个不同的价态，每个价态都有唯一的轨道布居、总磁矩和空间电荷密度。测量和预测的电荷密度之间的良好一致性揭示了这样的轨道构型可以在没有自旋敏感的读出机制的情况下被访问和操纵。这种轨道记忆从动能垒到原子弛豫导出了稳定性，展示了高温单原子信息存储的潜力。单原子存储可以大大超过传统高密度存储设备的限制，但具有挑战性。在这里，作者展示了黑磷上单个Co原子轨道构型的双稳性，它可以被访问和操纵，并具有高温单原子信息存储的潜力。
A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic gating or exchange-driven magnetic coupling. Here, we show a previously unobserved mechanism for single-atom magnetic storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Ab initio calculations reveal that distance-dependent screening from the BP surface stabilizes the two distinct valencies, each with a unique orbital population, total magnetic moment, and spatial charge density. Excellent correspondence between the measured and predicted charge densities reveal that such orbital configurations can be accessed and manipulated without a spin-sensitive readout mechanism. This orbital memory derives stability from the energetic barrier to atomic relaxation, demonstrating the potential for high-temperature single-atom information storage. Single-atom storage can dramatically exceed the limit of traditional high-density memory devices but is challenging. Here the authors show the bistability in the orbital configuration of a single Co atom on black phosphorus which can be accessed, manipulated and has potential for high-temperature single-atom information storage.
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