TEM investigation of irradiation damage in single crystal CeO2
TEM investigation of irradiation damage in single crystal CeO2
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单晶 CeO2 辐照损伤的 TEM 研究
DOI：
10.1016/j.jnucmat.2011.03.052
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发表时间：
2011
影响因子：
3.1
通讯作者：
J. Stubbins
中科院分区：
文献类型：
--
作者：
B. Ye;M. Kirk;Wei;A. Oaks;J. Rest;A. Yacout;J. Stubbins
为了了解氧化物核燃料辐射损伤的演化过程，将150-1000 keV的Kr离子注入单晶CeO 2中，模拟萤石陶瓷UO 2，同时进行了原位透射电镜（TEM）观察。在600 °C和800 °C温度下，研究了1 MeV Kr离子注入5 × 1015 ions/cm 2时，缺陷团簇的生长行为。TEM显微照片清楚地显示了缺陷结构的发展：位错环的成核，向扩展位错线的转变，以及缠结位错网络的形成。在600 °C和800 °C下位错生长速率的差异揭示了Ce空位在环形成过程中的重要作用。在室温和600 °C下通过150 keV Kr极化研究的气泡形成可能受到与阈值温度相关的金属空位的迁移率或作为温度函数的气体溶解度的限制的影响。
In order to understand the evolution of radiation damage in oxide nuclear fuel, 150–1000 keV Kr ions were implanted into single crystal CeO2, as a simulation of fluorite ceramic UO2, whilein situtransmission electron microscopy (TEM) observations were carried out. Two characteristic defect structures were investigated: dislocation/dislocation loops and nano-size gas bubbles.The growth behavior of defect clusters induced by 1 MeV Kr ions up to doses of 5 × 1015ions/cm2were followed at 600 °C and 800 °C. TEM micrographs clearly show the development of defect structures: nucleation of dislocation loops, transformation to extended dislocation lines, and the formation of tangled dislocation networks. The difference in dislocation growth rates at 600 °C and 800 °C revealed the important role which Ce–vacancies play in the loop formation process. Bubble formation, studied through 150 keV Kr implantations at room temperature and 600 °C, might be influenced by either the mobility of metal–vacancies correlated with at threshold temperature or the limitation of gas solubility as a function of temperature.
DOI：
10.1016/j.nimb.2009.09.014
发表时间：
2009-12-01
影响因子：
1.3
作者：
Hinks, J. A.
通讯作者：
Hinks, J. A.