CHARACTERIZATION OF CARRIER CONCENTRATION AND STRESS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY CATHODOLUMINESCENCE SPECTROSCOPY
CHARACTERIZATION OF CARRIER CONCENTRATION AND STRESS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY CATHODOLUMINESCENCE SPECTROSCOPY
复制标题
阴极发光光谱法表征 GAAS 金属半导体场效应晶体管中的载流子浓度和应力
DOI：
10.1063/1.368238
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发表时间：
1998
影响因子：
3.2
通讯作者：
H. Ishida
中科院分区：
文献类型：
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作者：
M. Yoshikawa;K. Iwagami;H. Ishida
我们用探测器测量了GaAs金属-半导体场效应晶体管横截面中栅电极周围的阴极发光光谱，并提出了一种利用阴极发光光谱估计电子器件中载流子浓度和应力的新技术。通过对峰值强度和峰值能量漂移图的比较，发现在漏区和源区存在重载流子掺杂，载流子浓度约为6×1017 atoms/cm ~ 3。从峰值能量偏移估计的载流子浓度同意从电容-电压方法得到的。此外，发现几乎没有任何载流子掺杂，并且在距离栅电极约2 μm处应力松弛。阴极发光光谱是一种用于在短时间内估计电子器件中载流子浓度和应力的二维分布的有用技术。
We have measured the cathodoluminescence spectra around the gate electrode in the cross section of a GaAs metal-semiconductor field-effect transistor with a detector and proposed a new technique to estimate the carrier concentration and stress in electronic devices, using cathodoluminescence spectroscopy. From a comparison between maps of the peak intensity and peak-energy shift, it is found that there is heavy carrier doping in the drain and source regions and that the carrier concentration is about 6×1017 atoms/cm3. The carrier concentration estimated from the peak-energy shift agrees well with that obtained from the capacitance–voltage method. Furthermore, it is found that there is hardly any carrier doping and that stresses are relaxed at a distance of about 2 μm from the gate electrode. Cathodoluminescence spectroscopy is a useful technique for estimating the two-dimensional distribution of the carrier concentration and stress in electronic devices within a short amount of time.
影响因子：
--
作者：
POLLAK, FH;CARDONA, M
通讯作者：
CARDONA, M