HR-EBSD analysis of in situ stable crack growth at the micron scale
HR-EBSD analysis of in situ stable crack growth at the micron scale
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微米级原位稳定裂纹扩展的 HR-EBSD 分析
DOI：
10.1016/j.jmps.2022.105173
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发表时间：
2022
影响因子：
5.3
通讯作者：
T. Marrow
中科院分区：
文献类型：
--
作者：
Abdalrhaman Koko;T. Becker;E. Elmukashfi;N. Pugno;A. Wilkinson;T. Marrow
在微观尺度上了解微观结构特征（如脆性夹杂物、涂层和界面）的局部断裂阻力对于材料的微观结构设计至关重要。在这项研究中，一种新的方法已经制定了分解的J-积分评价的弹性能量释放率的三维应力强度因子直接从实验测量的弹性变形梯度张量的裂纹场原位高（角）分辨率电子背散射衍射（HR-EBSD）。本文给出了一个在（001）单晶硅片低折射率{hkl}面上扩展的、倾斜于观察表面的准静态裂纹的典型研究。
Understanding the local fracture resistance of microstructural features, such as brittle inclusions, coatings, and interfaces, at the microscale is critical for microstructure-informed design of materials. In this study, a novel approach has been formulated to decompose the J-integral evaluation of the elastic energy release rate to the three-dimensional stress intensity factors directly from experimental measurements of the elastic deformation gradient tensors of the crack field by in situ high (angular) resolution electron backscatter diffraction (HR-EBSD). An exemplar study is presented of a quasi-static crack, inclined to the observed surface, propagating on low index {h k l} planes in a (001) single crystal silicon wafer.
影响因子：
9.4
作者：
Britton, T. Benjamin;Wilkinson, Angus J.
通讯作者：
Wilkinson, Angus J.
影响因子：
2.2
作者：
Britton, T. B.;Wilkinson, A. J.
通讯作者：
Wilkinson, A. J.