Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
复制标题
重复机械弯曲应变对聚酰亚胺上制造的可折叠低温多晶硅 TFT 各种尺寸的影响
DOI：
10.1109/led.2016.2584138
复制
发表时间：
2016
影响因子：
4.9
通讯作者：
I. Huang
中科院分区：
文献类型：
--
作者：
Bo;T. Chang;Y. Hung;Shin;Po;Chung;A. Chu;Terry Tai;Tsu‐Chiang Chang;Bo;Su;I. Huang
本文研究了重复单轴机械应力对多晶薄膜晶体管(TFT)偏压诱导退化行为的影响。在100000次沟道宽度方向机械压缩迭代后，观察到了严重的阈值电压退化和异常驼峰。模拟结果表明，最大机械应力出现在多晶硅和栅绝缘层之间的沟道边缘两侧。由于这些应力点在栅绝缘层中产生氧化物陷阱，阈值电压漂移和寄生电流路径的退化可以归因于这些强烈的机械应力点上的电子陷阱。此外，随着TFT尺寸的减小，薄膜的退化变得更加严重。
This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size.
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H