Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method
Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method
复制标题
聚合物辅助化学溶液沉积 (PACSD) 法用于 YBCO 涂层导体的 Sm 掺杂 CeO2 单缓冲层
DOI：
10.1016/j.jallcom.2007.11.073
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发表时间：
2008-10
影响因子：
6.2
通讯作者：
Zhao, Y.
中科院分区：
文献类型：
--
作者：
Wang, W. T.;Sun, R. P.;Wu, W.;Zhang, X.;Cheng, C. H.;Pu, M. H.;Yang, Y.;Li, G.;Zhao, Y.
在双轴织构NiW（200）合金衬底上沉积了厚度超过150 nm的Sm0.2Ce0.8O1.9−x（SCO）单层缓冲层。通过聚合物辅助化学溶液沉积（PACSD）方法获得了高度面内和面外取向、致密、光滑、无裂纹的SCO单层。采用PACSD方法在SCO缓冲的NiW上均匀沉积了YBCO薄膜，生长态的YBCO在Tc_0 = 87 K和J_c（0 T，77 K）= 1 MA/cm ~ 2处产生了锐转变。这些结果表明，稀土元素的掺杂可以有效地提高CeO 2薄膜的临界厚度，使其成为YBCO涂层导体的单一缓冲层。
An over 150nm thick Sm0.2Ce0.8O1.9−x(SCO) single buffer layer has been deposited on bi-axially textured NiW (200) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at Tc0=87K as well as Jc(0T, 77K)∼1MA/cm2. These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO2film, which renders it a promising candidate as single buffer layer for YBCO coated conductors.
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DOI：
10.1016/s0921-5107(03)00194-6
发表时间：
2003-11
影响因子：
3.6
作者：
S. Morlens;L. Ortega;B. Rousseau;S. Phok;J. L. Deschanvre;P. Chaudouët;P. Odier
通讯作者：
S. Morlens;L. Ortega;B. Rousseau;S. Phok;J. L. Deschanvre;P. Chaudouët;P. Odier
影响因子：
1.7
作者：
E. Gilioli;M. Baldini;M. Bindi;F. Bissoli;F. Pattini;S. Rampino;S. Ginocchio;A. Gauzzi;M. Rocca
通讯作者：
E. Gilioli;M. Baldini;M. Bindi;F. Bissoli;F. Pattini;S. Rampino;S. Ginocchio;A. Gauzzi;M. Rocca
影响因子：
1.7
作者：
D. Shi;Jung Ho Kim;Mingyuan Zhu;S. Dou
通讯作者：
D. Shi;Jung Ho Kim;Mingyuan Zhu;S. Dou
影响因子：
2.7
作者：
S. Sathyamurthy;M. Paranthaman;H. Zhai;H. Christen;P. M. Martin;A. Goyal
通讯作者：
S. Sathyamurthy;M. Paranthaman;H. Zhai;H. Christen;P. M. Martin;A. Goyal
影响因子：
2.7
作者：
J. Phillips;M. Siegal;R. B. Dover;T. Tiefel;J. H. Marshall;C. Brandle;G. Berkstresser;A. Strauss;R. E. Fahey;S. Sengupta;A. Cassanho;H. Jenssen
通讯作者：
J. Phillips;M. Siegal;R. B. Dover;T. Tiefel;J. H. Marshall;C. Brandle;G. Berkstresser;A. Strauss;R. E. Fahey;S. Sengupta;A. Cassanho;H. Jenssen