Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures.
Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures.
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DOI：
10.1038/s41598-018-35648-1
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发表时间：
2018-11-26
影响因子：
4.6
通讯作者：
Katiyar RS
中科院分区：
文献类型：
--
作者：
Pradhan DK;Kumari S;Vasudevan RK;Strelcov E;Puli VS;Pradhan DK;Kumar A;Gregg JM;Pradhan AK;Kalinin SV;Katiyar RS
多铁性材料作为未来各种微电子和存储器件的可能候选者已经引起了相当大的关注，尽管在室温下电和磁序之间的鲁棒磁电（ME）耦合仍然难以实现。为了在室温下获得稳定的ME耦合，我们研究了Pb（Fe0.5Nb0.5）O3/Ni0.65Zn0.35Fe2O4/Pb（Fe0.5Nb0.5）O3（PFN/NZFO/PFN）三层结构作为代表性的FE/FM/FE体系。我们报道了室温下尺寸为70/20/70 nm的PFN/NZFO/PFN三层纳米异质结构的铁电、磁性和ME性质。X射线衍射（XRD）和透射电子显微镜（TEM）的电子衍射图中仅存在PFN和NZFO的（00 l）反射，证实了多层异质结构的外延生长。研究了铁电回线面积在宽范围内的分布，表明铁电开关行为的空间变异性较低，薄膜生长质量较高。这些异质结构的铁电和磁性相变已被发现在~575 K和~650 K，分别远高于室温。这些纳米结构表现出低损耗角正切，大的饱和极化（Ps ~ 38 µC/cm 2）和磁化强度（Ms ~ 48 emu/cm 3），在室温下具有强ME耦合，揭示了它们作为纳米级多功能和自旋电子器件应用的潜在候选者。
Multiferroic materials have attracted considerable attention as possible candidates for a wide variety of future microelectronic and memory devices, although robust magnetoelectric (ME) coupling between electric and magnetic orders at room temperature still remains difficult to achieve. In order to obtain robust ME coupling at room temperature, we studied the Pb(Fe0.5Nb0.5)O3/Ni0.65Zn0.35Fe2O4/Pb(Fe0.5Nb0.5)O3 (PFN/NZFO/PFN) trilayer structure as a representative FE/FM/FE system. We report the ferroelectric, magnetic and ME properties of PFN/NZFO/PFN trilayer nanoscale heterostructure having dimensions 70/20/70 nm, at room temperature. The presence of only (00l) reflection of PFN and NZFO in the X-ray diffraction (XRD) patterns and electron diffraction patterns in Transmission Electron Microscopy (TEM) confirm the epitaxial growth of multilayer heterostructure. The distribution of the ferroelectric loop area in a wide area has been studied, suggesting that spatial variability of ferroelectric switching behavior is low, and film growth is of high quality. The ferroelectric and magnetic phase transitions of these heterostructures have been found at ~575 K and ~650 K, respectively which are well above room temperature. These nanostructures exhibit low loss tangent, large saturation polarization (Ps ~ 38 µC/cm2) and magnetization (Ms ~ 48 emu/cm3) with strong ME coupling at room temperature revealing them as potential candidates for nanoscale multifunctional and spintronics device applications.
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使用扫描探针显微镜区分铁电和非铁电机电效应
影响因子：
17.1
作者：
Balke, Nina;Maksymovych, Petro;Kalinin, Sergei V.
通讯作者：
Kalinin, Sergei V.
影响因子：
3.2
作者：
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WEST, RG
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通讯作者：
Scott, J. F.
影响因子：
3.7
作者：
Janolin, Pierre-Eymeric;Pertsev, Nikolay A.;Bellaiche, L.
通讯作者：
Bellaiche, L.
影响因子：
9.5
作者：
Gupta, Rekha;Chaudhary, Sujeet;Kotnala, R. K.
通讯作者：
Kotnala, R. K.