Surface Analysis of Photolithographic Patterns using ToF-SIMS and PCA.
Surface Analysis of Photolithographic Patterns using ToF-SIMS and PCA.
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DOI：
10.1002/sia.3056
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发表时间：
2009-03-18
影响因子：
1.7
通讯作者：
Castner, David G.
中科院分区：
文献类型：
--
作者：
Dubey, Manish;Emoto, Kazunori;Cheng, Fang;Gamble, Lara J.;Takahashi, Hironobu;Grainger, David W.;Castner, David G.
Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a surface analysis technique well-suited to detect and identify trace surface species. With the latest analyzers, ion sources and data analysis methods, imaging ToF-SIMS provides detailed 2-D and 3-D surface reactivity maps. Coupling multivariate analysis methods such as principal component analysis (PCA) with ToF-SIMS provides a powerful method for differentiating spatial regions with different chemistries. ToF-SIMS and PCA are used in this study to image and analyze a two-component photolithograph-patterned surface chemistry currently published and commercialized for bioassays, bio-chips and cell-based biosensors. A widely used reactive surface coupling chemistry, N-hydroxysuccinimide (NHS), and 2-methoxyethylamine (MeO) were co-patterned into adjacent regions on a commercial microarray polymer coating using standard photolithography methods involving deposition, patterning and removal of a routinely used photoresist material. After routine processing, ToF-SIMS and PCA of the patterned surface revealed significant residual photoresist material remaining at the interface of the NHS/MeO patterns, as well as lower concentrations of residual photoresist material remaining within the MeO-containing regions, providing spatial mapping and residue analysis not evident from other characterization techniques. As detection of surface photoresist residue remains an inherent challenge in photolithographic processing of a wide array of materials, the use of ToF-SIMS coupled with PCA is shown to be a high-resolution characterization tool with the high sensitivity and specificity required for surface quality control measurements following photolithography and pattern development relevant to many current processes.
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影响因子：
3.9
作者：
Midwood, KS;Carolus, MD;Schwartz, J
通讯作者：
Schwartz, J
DOI：
10.4028/www.scientific.net/ssp.65-66.215
发表时间：
1999-01-01
期刊：
SOLID STATE PHENOMENA
影响因子：
--
作者：
Riihisaari, T;Likonen, J;Muukkonen, E
通讯作者：
Muukkonen, E
影响因子：
6.7
作者：
Graham, Daniel J.;Wagner, Matthew S.;Castner, David G.
通讯作者：
Castner, David G.
DOI：
10.1016/j.jasms.2007.05.014
发表时间：
2007-08-01
影响因子：
3.2
作者：
Jones, Emrys A.;Lockyer, Nicholas P.;Vickerman, John C.
通讯作者：
Vickerman, John C.
影响因子：
7.4
作者：
Nakanishi, K;Muguruma, H;Karube, I
通讯作者：
Karube, I