Formation of quantized states and spin dynamics in III–V-based ferromagnetic quantum wells
Formation of quantized states and spin dynamics in III–V-based ferromagnetic quantum wells
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III-V 族铁磁量子阱中量子态的形成和自旋动力学
DOI：
10.1016/j.jmmm.2003.12.546
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发表时间：
2004
影响因子：
2.7
通讯作者：
H. Munekata
中科院分区：
文献类型：
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作者：
A. Oiwa;R. Moriya;Y. Kashimura;H. Munekata
我们研究了由不同阱宽度的III-V磁性合金半导体组成的单量子阱中的量子尺寸效应和自旋动力学。在磁圆二色光谱中观察到的宽负峰的蓝移表明 (Ga,Mn)As 阱层中量子态的形成。铁磁 SQW 采用时间分辨克尔旋转测量来研究提升空穴子带之间的简并性对自旋动力学的影响。观察到 Mn 自旋旋转幅度的显着增强。
We have studied quantum size effect and spin dynamics in single quantum wells consisting of III–V magnetic alloy semiconductor with different well width. A blue-shift of the broad negative peak observed in magnetic circular dichroism spectra indicates the formation of quantized states in (Ga,Mn)As well layers. Time-resolved Kerr rotation measurements were employed for ferromagnetic SQW to study the influence of lifting the degeneracy between hole sub-bands on the spin dynamics. Significant enhancement in the magnitude of Mn spin rotation was observed.
影响因子：
8.6
作者：
A. Oiwa;Y. Mitsumori;R. Moriya;T. Słupinski;H. Munekata
通讯作者：
A. Oiwa;Y. Mitsumori;R. Moriya;T. Słupinski;H. Munekata