Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)
Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)
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Si(111) 上 Ge 诱导不公度相的原子尺度研究
DOI:
10.1088/0256-307x/27/2/026802
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发表时间:
2010-02
影响因子:
3.5
通讯作者:
Xue Qi-Kun
中科院分区:
文献类型:
--
作者:
Wu Rui;Wang Li-Li;Zhang Yi;Ma Xu-Cun;Jia Jin-Feng;Xue Qi-Kun
Two Ge-induced incommensurate phases, γ and β, on Si(111) are observed and studied by in situ scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si(11)-1 × 1 surface. Th
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影响因子:
3.7
作者:
Lai, MY;Wang, YL
通讯作者:
Wang, YL
DOI:
10.1103/physrevb.51.9965
发表时间:
1995-04
期刊:
Physical review. B, Condensed matter
影响因子:
--
作者:
Boehringer;Molinàs-Mata;Artacho;Zegenhagen
通讯作者:
Boehringer;Molinàs-Mata;Artacho;Zegenhagen
DOI:
10.1103/physrevb.51.9952
发表时间:
1995-04
期刊:
Physical review. B, Condensed matter
影响因子:
--
作者:
Artacho;Molinàs-Mata;Boehringer;Zegenhagen;Franklin;Patel
通讯作者:
Artacho;Molinàs-Mata;Boehringer;Zegenhagen;Franklin;Patel
影响因子:
1.9
作者:
T. Kawasaki;T. An;Hiroshi Ito;T. Ichinokawa
通讯作者:
T. Kawasaki;T. An;Hiroshi Ito;T. Ichinokawa
影响因子:
2.1
作者:
W. Yang;F. Jona
通讯作者:
W. Yang;F. Jona