Preparation of NbAs Single Crystal by the Seed Growth Process
Preparation of NbAs Single Crystal by the Seed Growth Process
复制标题
晶种生长法制备铌砷单晶
DOI：
10.20944/preprints202201.0389.v1
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发表时间：
2022-01
期刊：
影响因子：
2.7
通讯作者：
Hailong Qiu
中科院分区：
文献类型：
--
作者：
Yinchang Sun;Bojin Zhao;Zongju Huo;Hongjun Liu;Yongkuan Xu;Zhanggui Hu;Hailong Qiu
外尔半金属是一种具有外尔费米子行为的低能电子激发的新型晶体。它受到了全世界的关注，并被认为是在石墨烯和三维拓扑绝缘体之后开启了凝聚态物理学的下一个时代。但在制备过程中存在着许多形核现象，不易获得大尺寸单晶。本文提出了一种底部籽晶CVT法生长NbAs单晶的方法，最终获得了尺寸为5 × 4 × 4 mm ~ 3的大尺寸、高质量NbAs单晶。X射线衍射和STEM证实它们是四元NbAs，其关键是在垂直生长炉中使用籽晶。值得注意的是，在现有条件下获得了晶体的光电性质，为后续工作做了铺垫。
A Weyl semimetal is a novel crystal with low-energy electronic excitations that behave as Weyl fermions. It has received worldwide interest and was believed to have opened the next era of condensed matter physics after graphene and three-dimensional topological insulators. Howev-er, it is not easy to obtain a single large-size crystal because there are many nucleations in the preparation process. Here, a bottom-seed CVT growth method is proposed in this paper, and we acquired the large-size, high-quality NbAs single crystals up to 5x4x4 mm3 finally. X-ray diffrac-tion and STEM confirmed that they are tetragonal NbAs, which the key is to use seed crystal in vertical growth furnace. Notably, the photoelectric properties of the crystal are obtained under the existing conditions, which paves the way for the follow-up work.
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影响因子：
2.7
作者：
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通讯作者：
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具有多个拓扑载流子的外尔半金属 NbAs 的手性朗道能级。
影响因子：
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作者：
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作者：
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影响因子：
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影响因子：
3.7
作者：
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G. Chiarello;Johannes S. Hofmann;Zhilin Li;Vito Fabio;Liwei Guo;Xiaolong Chen;S. Sarma;A. Politano