Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing.
Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing.
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DOI：
10.1007/s40820-021-00784-3
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发表时间：
2022-02-05
影响因子：
26.6
通讯作者：
Jang HW
中科院分区：
文献类型：
--
作者：
Kwon KC;Baek JH;Hong K;Kim SY;Jang HW
基于二维（2D）过渡金属硫属化物（TMC）材料的优点，介绍了用于神经形态计算的忆阻器的操作概念和基础。本文综述了2D TMC材料和异质结的发展前景，以及基于2D TMC的忆阻器在神经形态计算中的应用。最新的进展，当前的挑战，以及未来的前景，基于2D的TMCs的忆阻神经形态器件的制造和表征进行了讨论。二维（2D）过渡金属硫属化物（TMC）及其异质结构作为广泛的电子和光电器件中的构建块是有吸引力的，特别是用于脑启发神经形态计算系统的未来忆阻和突触器件。这些独特的特性，如高耐用性、电气和光学可调性、清洁表面、柔性和LEGO铆接能力，使制造简单、集成密度高、节能运行和高可扩展性成为可能。本文综述了基于2D TMC的高性能忆阻器在神经形态计算应用中的应用，包括2D TMC材料和异质结构的前景，以及最先进的忆阻器件的演示。最后讨论了这些新兴材料和器件的发展所面临的挑战和前景。本文的目的是对基于2D TMCs的神经形态忆阻器的制造和表征进行展望。
Based on the benefits of two-dimensional (2D) transition metal chalcogenides (TMC) materials, the operating concepts and basics of memristors for neuromorphic computing are introduced. The prospects of 2D TMC materials and heterostructures are reviewed, as well as the state-of-the-art demonstration of 2D TMCs-based memristors for neuromorphic computing applications. The most recent advances, current challenges, and future prospects for the manufacture and characterization of memristive neuromorphic devices based on 2D TMCs are discussed. Two-dimensional (2D) transition metal chalcogenides (TMC) and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices, particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems. The distinct properties such as high durability, electrical and optical tunability, clean surface, flexibility, and LEGO-staking capability enable simple fabrication with high integration density, energy-efficient operation, and high scalability. This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications, including the promise of 2D TMC materials and heterostructures, as well as the state-of-the-art demonstration of memristive devices. The challenges and future prospects for the development of these emerging materials and devices are also discussed. The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.
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影响因子：
16.6
作者：
Boyn S;Grollier J;Lecerf G;Xu B;Locatelli N;Fusil S;Girod S;Carrétéro C;Garcia K;Xavier S;Tomas J;Bellaiche L;Bibes M;Barthélémy A;Saïghi S;Garcia V
通讯作者：
Garcia V
影响因子：
16.6
作者：
Choi C;Leem J;Kim M;Taqieddin A;Cho C;Cho KW;Lee GJ;Seung H;Bae HJ;Song YM;Hyeon T;Aluru NR;Nam S;Kim DH
通讯作者：
Kim DH
影响因子：
17.1
作者：
Cheng, Yingchun;Nie, Anmin;Schwingenschlogl, Udo
通讯作者：
Schwingenschlogl, Udo
影响因子：
4.3
作者：
Bohnstingl, Thomas;Scherr, Franz;Maass, Wolfgang
通讯作者：
Maass, Wolfgang
影响因子：
10.8
作者：
Cheng, Peifu;Sun, Kai;Hu, Yun Hang
通讯作者：
Hu, Yun Hang