Enhanced photocatalytic performance of g-C3N4-BiVO4-Ag heterojunction induced by interfacial electric fields and Schottky junction
Enhanced photocatalytic performance of g-C3N4-BiVO4-Ag heterojunction induced by interfacial electric fields and Schottky junction
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界面电场和肖特基结诱导的 g-C3N4-BiVO4-Ag 异质结增强光催化性能
DOI：
10.1016/j.jallcom.2021.163214
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发表时间：
2021-12
影响因子：
6.2
通讯作者：
Ao Xia
中科院分区：
文献类型：
--
作者：
Mingyue Dang;Guoqiang Tan;Min Wang;Bixin Zhang;Yong Wang;Long Lv;Huijun Ren;Ao Xia
本工作采用两步光沉积法制备了 g-C3N4-BiVO4-Ag 异质结。 Ag颗粒选择性沉积在BiVO4(010)面上，而带负电的g-C3N4使用NaIO3作为电子捕获剂选择性沉积在BiVO4(110)面上。由于g-C3N4-BiVO4-Ag异质结之间静电引力的协同作用以及Ag与BiVO4(010)之间肖特基结的形成，加速了g-C3N4-BiVO4-Ag异质结的电荷分离。此外，由于等离子体Ag的SPR效应，g-C3N4-BiVO4-Ag异质结表现出增强的光吸收。同时，等离子体Ag可产生高能热电子，将O2分子还原为·O2自由基，进一步降解有机污染物。在可见光照射下，最佳异质结对RhB、MB和CIP的降解率分别为0.00882、0.01507和0.001030.00103 min-1，分别是BiVO4的5.38、7.81和2.02倍。 g-C3N4-BiVO4-Ag异质结的增强光催化活性归因于g-C3N4和BiVO4(110)之间的界面静电电场、BiVO4(010)和Ag之间的表面异质结和肖特基结的内置电场以及Ag的SPR效应的综合作用。
In this work, g-C3N4-BiVO4-Ag heterojunction was prepared via two-step photo-deposition method. The Ag particles were selectively deposited on the BiVO4(010) facet, while the negatively charged g-C3N4was selectively deposited on BiVO4(110) facet using NaIO3as electron trapping agent. The charge separation of g-C3N4-BiVO4-Ag heterojunction was accelerated due to the synergy of the electrostatic attraction between g-C3N4and BiVO4(110), and the formation of Schottky junction between Ag and BiVO4(010). Moreover, g-C3N4-BiVO4-Ag heterojunction showed enhanced light absorption due to the SPR effect of plasma Ag. At the same time, plasma Ag could generate high-energy hot electrons to reduce O2molecule to •O2-radical, which could further degraded organic pollutants. Under visible light irradiation, the degradation rates of the optimal heterojunction to RhB, MB and CIP were 0.00882, 0.01507 and 0.001030.00103 min-1, respectively, which were 5.38, 7.81 and 2.02 times higher than that of BiVO4. The enhanced photocatalytic activity of g-C3N4-BiVO4-Ag heterojunction was attributed to the combined effect of interfacial electrostatic electric field between g-C3N4and BiVO4(110), the built-in electric fields of surface heterojunction and Schottky junction between BiVO4(010) and Ag, and the SPR effect of Ag.
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